Nanoscale ferroelectric domain switching and thickness scaling impact in undoped hafnium-oxide ferroelectric devices

Chia Chi Fan; Hsuan Han Chen; Ruo Yin Liao; Wu Ching Chou; Ching Chien Huang; Hsiao Hsuan Hsu; Su Ting Han; Chun Hu Cheng

doi:10.1016/j.tsf.2024.140400

Nanoscale ferroelectric domain switching and thickness scaling impact in undoped hafnium-oxide ferroelectric devices

Chia Chi Fan, Hsuan Han Chen, Ruo Yin Liao, Wu Ching Chou, Ching Chien Huang, Hsiao Hsuan Hsu, Su Ting Han, Chun Hu Cheng^*

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, we investigated the polarization characteristics of nanoscale undoped hafnium oxide (HfO₂) ferroelectric film. The nanoscale domain switching behavior of undoped HfO₂ is mainly dominated by mixed ferroelectric/nonferroelectric crystalline phases and interface domain pinning by oxygen vacancies or defect traps. Our experimental results confirm that these issues can be improved by film thickness scaling and well-controlled mechanical stress. We demonstrated a 4-nm-thick undoped HfO₂ negative capacitance thin film transistor (NCFET) with an energy-efficient switch characteristic of a low overdrive voltage of -0.6 V, a steep subthreshold swing of sub-60 mV/dec and a uniform hysteresis distribution of sub-60 mV.

Original language	English
Article number	140400
Journal	Thin Solid Films
Volume	799
DOIs	https://doi.org/10.1016/j.tsf.2024.140400
Publication status	Published - 2024 Jun 30

Keywords

Domain pinning
Ferroelectric
Hafnium oxide
Negative capacitance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2024.140400

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title = "Nanoscale ferroelectric domain switching and thickness scaling impact in undoped hafnium-oxide ferroelectric devices",

abstract = "In this work, we investigated the polarization characteristics of nanoscale undoped hafnium oxide (HfO2) ferroelectric film. The nanoscale domain switching behavior of undoped HfO2 is mainly dominated by mixed ferroelectric/nonferroelectric crystalline phases and interface domain pinning by oxygen vacancies or defect traps. Our experimental results confirm that these issues can be improved by film thickness scaling and well-controlled mechanical stress. We demonstrated a 4-nm-thick undoped HfO2 negative capacitance thin film transistor (NCFET) with an energy-efficient switch characteristic of a low overdrive voltage of -0.6 V, a steep subthreshold swing of sub-60 mV/dec and a uniform hysteresis distribution of sub-60 mV.",

keywords = "Domain pinning, Ferroelectric, Hafnium oxide, Negative capacitance",

author = "Fan, {Chia Chi} and Chen, {Hsuan Han} and Liao, {Ruo Yin} and Chou, {Wu Ching} and Huang, {Ching Chien} and Hsu, {Hsiao Hsuan} and Han, {Su Ting} and Cheng, {Chun Hu}",

note = "Publisher Copyright: {\textcopyright} 2024 Elsevier B.V.",

year = "2024",

month = jun,

day = "30",

doi = "10.1016/j.tsf.2024.140400",

language = "English",

volume = "799",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Nanoscale ferroelectric domain switching and thickness scaling impact in undoped hafnium-oxide ferroelectric devices

AU - Fan, Chia Chi

AU - Chen, Hsuan Han

AU - Liao, Ruo Yin

AU - Chou, Wu Ching

AU - Huang, Ching Chien

AU - Hsu, Hsiao Hsuan

AU - Han, Su Ting

AU - Cheng, Chun Hu

PY - 2024/6/30

Y1 - 2024/6/30

N2 - In this work, we investigated the polarization characteristics of nanoscale undoped hafnium oxide (HfO2) ferroelectric film. The nanoscale domain switching behavior of undoped HfO2 is mainly dominated by mixed ferroelectric/nonferroelectric crystalline phases and interface domain pinning by oxygen vacancies or defect traps. Our experimental results confirm that these issues can be improved by film thickness scaling and well-controlled mechanical stress. We demonstrated a 4-nm-thick undoped HfO2 negative capacitance thin film transistor (NCFET) with an energy-efficient switch characteristic of a low overdrive voltage of -0.6 V, a steep subthreshold swing of sub-60 mV/dec and a uniform hysteresis distribution of sub-60 mV.

AB - In this work, we investigated the polarization characteristics of nanoscale undoped hafnium oxide (HfO2) ferroelectric film. The nanoscale domain switching behavior of undoped HfO2 is mainly dominated by mixed ferroelectric/nonferroelectric crystalline phases and interface domain pinning by oxygen vacancies or defect traps. Our experimental results confirm that these issues can be improved by film thickness scaling and well-controlled mechanical stress. We demonstrated a 4-nm-thick undoped HfO2 negative capacitance thin film transistor (NCFET) with an energy-efficient switch characteristic of a low overdrive voltage of -0.6 V, a steep subthreshold swing of sub-60 mV/dec and a uniform hysteresis distribution of sub-60 mV.

KW - Domain pinning

KW - Ferroelectric

KW - Hafnium oxide

KW - Negative capacitance

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DO - 10.1016/j.tsf.2024.140400

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VL - 799

JO - Thin Solid Films

JF - Thin Solid Films

M1 - 140400

ER -

Nanoscale ferroelectric domain switching and thickness scaling impact in undoped hafnium-oxide ferroelectric devices

Abstract

Keywords

ASJC Scopus subject areas

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