Nanopillar transistors exhibiting single-electron quantum effects at room temperature

Yue Min Wan; Heng Tein Lin; Chin Lung Sung; Shu Fen Hu

doi:10.1063/1.2056577

Nanopillar transistors exhibiting single-electron quantum effects at room temperature

Yue Min Wan^*
, Heng Tein Lin
, Chin Lung Sung
, Shu Fen Hu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A nanoelectronic device consisting of a Si Nx SiSi Nx nanopillar and a side electrical gate has been assembled to display single-electron resonance tunneling and Coulomb modulation at 300 K. The device features an ultrasmall quantum dot of size ∼10×10×3 nm3 and its manufacture is fully silicon processing compatible. We find a simple guideline to derive the gate-dot coupling strength α by comparison of the peak spacing in the current-voltage (I-V) characteristics of Id - Vd and Id - Vg at low voltage. The better-defined quantum cavity enables us to apply a three-dimensional single-particle model to identify the excited quantum states.

Original language	English
Article number	123506
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	12
DOIs	https://doi.org/10.1063/1.2056577
Publication status	Published - 2005 Sept 19
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2056577

Cite this

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title = "Nanopillar transistors exhibiting single-electron quantum effects at room temperature",

abstract = "A nanoelectronic device consisting of a Si Nx SiSi Nx nanopillar and a side electrical gate has been assembled to display single-electron resonance tunneling and Coulomb modulation at 300 K. The device features an ultrasmall quantum dot of size ∼10×10×3 nm3 and its manufacture is fully silicon processing compatible. We find a simple guideline to derive the gate-dot coupling strength α by comparison of the peak spacing in the current-voltage (I-V) characteristics of Id - Vd and Id - Vg at low voltage. The better-defined quantum cavity enables us to apply a three-dimensional single-particle model to identify the excited quantum states.",

author = "Wan, \{Yue Min\} and Lin, \{Heng Tein\} and Sung, \{Chin Lung\} and Hu, \{Shu Fen\}",

note = "Funding Information: The authors thank the research staff in the National Nano Device Laboratories (NDL) for much experimental assistance. This work was financially supported by the National Science Council of Taiwan under Contract Nos. NSC91-2112-M-214-001, NSC92-2215-E-492-008, and ISU93-01-06.",

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doi = "10.1063/1.2056577",

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journal = "Applied Physics Letters",

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AU - Wan, Yue Min

AU - Lin, Heng Tein

AU - Sung, Chin Lung

AU - Hu, Shu Fen

N1 - Funding Information: The authors thank the research staff in the National Nano Device Laboratories (NDL) for much experimental assistance. This work was financially supported by the National Science Council of Taiwan under Contract Nos. NSC91-2112-M-214-001, NSC92-2215-E-492-008, and ISU93-01-06.

PY - 2005/9/19

Y1 - 2005/9/19

N2 - A nanoelectronic device consisting of a Si Nx SiSi Nx nanopillar and a side electrical gate has been assembled to display single-electron resonance tunneling and Coulomb modulation at 300 K. The device features an ultrasmall quantum dot of size ∼10×10×3 nm3 and its manufacture is fully silicon processing compatible. We find a simple guideline to derive the gate-dot coupling strength α by comparison of the peak spacing in the current-voltage (I-V) characteristics of Id - Vd and Id - Vg at low voltage. The better-defined quantum cavity enables us to apply a three-dimensional single-particle model to identify the excited quantum states.

AB - A nanoelectronic device consisting of a Si Nx SiSi Nx nanopillar and a side electrical gate has been assembled to display single-electron resonance tunneling and Coulomb modulation at 300 K. The device features an ultrasmall quantum dot of size ∼10×10×3 nm3 and its manufacture is fully silicon processing compatible. We find a simple guideline to derive the gate-dot coupling strength α by comparison of the peak spacing in the current-voltage (I-V) characteristics of Id - Vd and Id - Vg at low voltage. The better-defined quantum cavity enables us to apply a three-dimensional single-particle model to identify the excited quantum states.

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Nanopillar transistors exhibiting single-electron quantum effects at room temperature

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