Abstract
A nanoelectronic device consisting of a Si Nx SiSi Nx nanopillar and a side electrical gate has been assembled to display single-electron resonance tunneling and Coulomb modulation at 300 K. The device features an ultrasmall quantum dot of size ∼10×10×3 nm3 and its manufacture is fully silicon processing compatible. We find a simple guideline to derive the gate-dot coupling strength α by comparison of the peak spacing in the current-voltage (I-V) characteristics of Id - Vd and Id - Vg at low voltage. The better-defined quantum cavity enables us to apply a three-dimensional single-particle model to identify the excited quantum states.
Original language | English |
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Article number | 123506 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 87 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2005 Sept 19 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)