Nanopillar transistors exhibiting single-electron quantum effects at room temperature

Yue Min Wan*, Heng Tein Lin, Chin Lung Sung, Shu Fen Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


A nanoelectronic device consisting of a Si Nx SiSi Nx nanopillar and a side electrical gate has been assembled to display single-electron resonance tunneling and Coulomb modulation at 300 K. The device features an ultrasmall quantum dot of size ∼10×10×3 nm3 and its manufacture is fully silicon processing compatible. We find a simple guideline to derive the gate-dot coupling strength α by comparison of the peak spacing in the current-voltage (I-V) characteristics of Id - Vd and Id - Vg at low voltage. The better-defined quantum cavity enables us to apply a three-dimensional single-particle model to identify the excited quantum states.

Original languageEnglish
Article number123506
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 2005 Sept 19
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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