Nanohomojunction (GaN) and nanoheterojunction (InN) nanorods on one-dimensional GaN nanowire substrates

Zon Huang Lan, Chi Hui Liang, Chih Wei Hsu, Chien Ting Wu, Huang Min Lin, Sandip Dhara, Kuei Hsien Chen, Li Chyong Chen, Chia Chun Chen

Research output: Contribution to journalArticle

71 Citations (Scopus)

Abstract

The formation of homojunctions and heterojunctions on two-dimensional (2D) substrates plays a key role in the device performance of thin films. Accelerating the progress of device fabrication in nanowires (NWs) also necessitates a similar understanding in the one-dimensional (1D) system. Nanohomojunction (GaN on GaN) and nanoheterojunction (InN on GaN) nanorods (NRs) were formed in a two-step growth process by a vapor-liquid-solid (VLS) mechanism. Ga2O3 nanoribbons were formed using Ni as catalyst in a chemical vapor deposition (CVD) technique and the completely converted to GaN NWs with NH3 as reactant gas. An Au catalyst is used in the second step of the VLS process to grow GaN and InN NRs on GaN NWs using CVD techniques. A morphological study showed the formation of nanobrushes with different structural symmetries and sub-symmetries in both homogeneous and heterogeneous systems. Structural characterizations showed nearly defect-free growth of nanohomojunction (GaN) and nanoheterojunction (InN) NRs on 1D GaN NW substrates.

Original languageEnglish
Pages (from-to)233-237
Number of pages5
JournalAdvanced Functional Materials
Volume14
Issue number3
DOIs
Publication statusPublished - 2004 Mar

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Nanorods
nanorods
Nanowires
nanowires
Substrates
Chemical vapor deposition
Vapors
vapor deposition
vapors
catalysts
homojunctions
Nanoribbons
Catalysts
Carbon Nanotubes
Liquids
symmetry
liquids
Heterojunctions
heterojunctions
Gases

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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Nanohomojunction (GaN) and nanoheterojunction (InN) nanorods on one-dimensional GaN nanowire substrates. / Lan, Zon Huang; Liang, Chi Hui; Hsu, Chih Wei; Wu, Chien Ting; Lin, Huang Min; Dhara, Sandip; Chen, Kuei Hsien; Chen, Li Chyong; Chen, Chia Chun.

In: Advanced Functional Materials, Vol. 14, No. 3, 03.2004, p. 233-237.

Research output: Contribution to journalArticle

Lan, Zon Huang ; Liang, Chi Hui ; Hsu, Chih Wei ; Wu, Chien Ting ; Lin, Huang Min ; Dhara, Sandip ; Chen, Kuei Hsien ; Chen, Li Chyong ; Chen, Chia Chun. / Nanohomojunction (GaN) and nanoheterojunction (InN) nanorods on one-dimensional GaN nanowire substrates. In: Advanced Functional Materials. 2004 ; Vol. 14, No. 3. pp. 233-237.
@article{046633b74a244946ab7c790f3f7df82b,
title = "Nanohomojunction (GaN) and nanoheterojunction (InN) nanorods on one-dimensional GaN nanowire substrates",
abstract = "The formation of homojunctions and heterojunctions on two-dimensional (2D) substrates plays a key role in the device performance of thin films. Accelerating the progress of device fabrication in nanowires (NWs) also necessitates a similar understanding in the one-dimensional (1D) system. Nanohomojunction (GaN on GaN) and nanoheterojunction (InN on GaN) nanorods (NRs) were formed in a two-step growth process by a vapor-liquid-solid (VLS) mechanism. Ga2O3 nanoribbons were formed using Ni as catalyst in a chemical vapor deposition (CVD) technique and the completely converted to GaN NWs with NH3 as reactant gas. An Au catalyst is used in the second step of the VLS process to grow GaN and InN NRs on GaN NWs using CVD techniques. A morphological study showed the formation of nanobrushes with different structural symmetries and sub-symmetries in both homogeneous and heterogeneous systems. Structural characterizations showed nearly defect-free growth of nanohomojunction (GaN) and nanoheterojunction (InN) NRs on 1D GaN NW substrates.",
author = "Lan, {Zon Huang} and Liang, {Chi Hui} and Hsu, {Chih Wei} and Wu, {Chien Ting} and Lin, {Huang Min} and Sandip Dhara and Chen, {Kuei Hsien} and Chen, {Li Chyong} and Chen, {Chia Chun}",
year = "2004",
month = "3",
doi = "10.1002/adfm.200304403",
language = "English",
volume = "14",
pages = "233--237",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "Wiley-VCH Verlag",
number = "3",

}

TY - JOUR

T1 - Nanohomojunction (GaN) and nanoheterojunction (InN) nanorods on one-dimensional GaN nanowire substrates

AU - Lan, Zon Huang

AU - Liang, Chi Hui

AU - Hsu, Chih Wei

AU - Wu, Chien Ting

AU - Lin, Huang Min

AU - Dhara, Sandip

AU - Chen, Kuei Hsien

AU - Chen, Li Chyong

AU - Chen, Chia Chun

PY - 2004/3

Y1 - 2004/3

N2 - The formation of homojunctions and heterojunctions on two-dimensional (2D) substrates plays a key role in the device performance of thin films. Accelerating the progress of device fabrication in nanowires (NWs) also necessitates a similar understanding in the one-dimensional (1D) system. Nanohomojunction (GaN on GaN) and nanoheterojunction (InN on GaN) nanorods (NRs) were formed in a two-step growth process by a vapor-liquid-solid (VLS) mechanism. Ga2O3 nanoribbons were formed using Ni as catalyst in a chemical vapor deposition (CVD) technique and the completely converted to GaN NWs with NH3 as reactant gas. An Au catalyst is used in the second step of the VLS process to grow GaN and InN NRs on GaN NWs using CVD techniques. A morphological study showed the formation of nanobrushes with different structural symmetries and sub-symmetries in both homogeneous and heterogeneous systems. Structural characterizations showed nearly defect-free growth of nanohomojunction (GaN) and nanoheterojunction (InN) NRs on 1D GaN NW substrates.

AB - The formation of homojunctions and heterojunctions on two-dimensional (2D) substrates plays a key role in the device performance of thin films. Accelerating the progress of device fabrication in nanowires (NWs) also necessitates a similar understanding in the one-dimensional (1D) system. Nanohomojunction (GaN on GaN) and nanoheterojunction (InN on GaN) nanorods (NRs) were formed in a two-step growth process by a vapor-liquid-solid (VLS) mechanism. Ga2O3 nanoribbons were formed using Ni as catalyst in a chemical vapor deposition (CVD) technique and the completely converted to GaN NWs with NH3 as reactant gas. An Au catalyst is used in the second step of the VLS process to grow GaN and InN NRs on GaN NWs using CVD techniques. A morphological study showed the formation of nanobrushes with different structural symmetries and sub-symmetries in both homogeneous and heterogeneous systems. Structural characterizations showed nearly defect-free growth of nanohomojunction (GaN) and nanoheterojunction (InN) NRs on 1D GaN NW substrates.

UR - http://www.scopus.com/inward/record.url?scp=1842455253&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1842455253&partnerID=8YFLogxK

U2 - 10.1002/adfm.200304403

DO - 10.1002/adfm.200304403

M3 - Article

AN - SCOPUS:1842455253

VL - 14

SP - 233

EP - 237

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

IS - 3

ER -