Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency

Y. J. Lee; T. C. Lu; H. C. Kuo; S. C. Wang; T. C. Hsu; M. H. Hsieh; M. J. Jou; B. J. Lee

doi:10.1016/j.mseb.2006.11.015

Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency

Y. J. Lee^*, T. C. Lu, H. C. Kuo, S. C. Wang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A chemical wet etching technique is presented to form a nano-roughened surface with triangle-like morphology on n-side-up AlGaInP-based LEDs fabricated by adopting adhesive layer bonding scheme. A simple and commonly used H₃PO₄-based solution was applied for chemical wet etching. The morphology of nano-roughened surfaces is analyzed by the atomic force microscope (AFM) and significantly related to the enhancement factor of the LED output power. The output power shows 80% increase after optimizing the nano-roughened morphology of n-side surface, as compared to the ordinary flat surface LED.

Original language	English
Pages (from-to)	157-160
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	138
Issue number	2
DOIs	https://doi.org/10.1016/j.mseb.2006.11.015
Publication status	Published - 2007 Mar 25
Externally published	Yes

Keywords

AlGaInP-based LEDs
Chemical wet etching
Nano-roughening

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2006.11.015

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@article{f074a2f0e6c1430e80406d93bc97315c,

title = "Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency",

abstract = "A chemical wet etching technique is presented to form a nano-roughened surface with triangle-like morphology on n-side-up AlGaInP-based LEDs fabricated by adopting adhesive layer bonding scheme. A simple and commonly used H3PO4-based solution was applied for chemical wet etching. The morphology of nano-roughened surfaces is analyzed by the atomic force microscope (AFM) and significantly related to the enhancement factor of the LED output power. The output power shows 80% increase after optimizing the nano-roughened morphology of n-side surface, as compared to the ordinary flat surface LED.",

keywords = "AlGaInP-based LEDs, Chemical wet etching, Nano-roughening",

author = "Lee, {Y. J.} and Lu, {T. C.} and Kuo, {H. C.} and Wang, {S. C.} and Hsu, {T. C.} and Hsieh, {M. H.} and Jou, {M. J.} and Lee, {B. J.}",

note = "Funding Information: This work was supported in part by the National Science Council of Republic of China (ROC) in Taiwan under Contract NSC NSC95-2120-M-009-008 and NSC95-2752-E-229-007-PAE.",

year = "2007",

month = mar,

day = "25",

doi = "10.1016/j.mseb.2006.11.015",

language = "English",

volume = "138",

pages = "157--160",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "2",

}

TY - JOUR

T1 - Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency

AU - Lee, Y. J.

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

AU - Hsu, T. C.

AU - Hsieh, M. H.

AU - Jou, M. J.

AU - Lee, B. J.

N1 - Funding Information: This work was supported in part by the National Science Council of Republic of China (ROC) in Taiwan under Contract NSC NSC95-2120-M-009-008 and NSC95-2752-E-229-007-PAE.

PY - 2007/3/25

Y1 - 2007/3/25

N2 - A chemical wet etching technique is presented to form a nano-roughened surface with triangle-like morphology on n-side-up AlGaInP-based LEDs fabricated by adopting adhesive layer bonding scheme. A simple and commonly used H3PO4-based solution was applied for chemical wet etching. The morphology of nano-roughened surfaces is analyzed by the atomic force microscope (AFM) and significantly related to the enhancement factor of the LED output power. The output power shows 80% increase after optimizing the nano-roughened morphology of n-side surface, as compared to the ordinary flat surface LED.

AB - A chemical wet etching technique is presented to form a nano-roughened surface with triangle-like morphology on n-side-up AlGaInP-based LEDs fabricated by adopting adhesive layer bonding scheme. A simple and commonly used H3PO4-based solution was applied for chemical wet etching. The morphology of nano-roughened surfaces is analyzed by the atomic force microscope (AFM) and significantly related to the enhancement factor of the LED output power. The output power shows 80% increase after optimizing the nano-roughened morphology of n-side surface, as compared to the ordinary flat surface LED.

KW - AlGaInP-based LEDs

KW - Chemical wet etching

KW - Nano-roughening

UR - http://www.scopus.com/inward/record.url?scp=33847254429&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847254429&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2006.11.015

DO - 10.1016/j.mseb.2006.11.015

M3 - Article

AN - SCOPUS:33847254429

SN - 0921-5107

VL - 138

SP - 157

EP - 160

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 2

ER -

Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency

Abstract

Keywords

ASJC Scopus subject areas

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