Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency

Y. J. Lee*, T. C. Lu, H. C. Kuo, S. C. Wang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


A chemical wet etching technique is presented to form a nano-roughened surface with triangle-like morphology on n-side-up AlGaInP-based LEDs fabricated by adopting adhesive layer bonding scheme. A simple and commonly used H3PO4-based solution was applied for chemical wet etching. The morphology of nano-roughened surfaces is analyzed by the atomic force microscope (AFM) and significantly related to the enhancement factor of the LED output power. The output power shows 80% increase after optimizing the nano-roughened morphology of n-side surface, as compared to the ordinary flat surface LED.

Original languageEnglish
Pages (from-to)157-160
Number of pages4
JournalMaterials Science and Engineering: B
Issue number2
Publication statusPublished - 2007 Mar 25
Externally publishedYes


  • AlGaInP-based LEDs
  • Chemical wet etching
  • Nano-roughening

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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