Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency

Ya-Ju Lee, T. C. Lu, H. C. Kuo, S. C. Wang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A chemical wet etching technique is presented to form a nano-roughened surface with triangle-like morphology on n-side-up AlGaInP-based LEDs fabricated by adopting adhesive layer bonding scheme. A simple and commonly used H3PO4-based solution was applied for chemical wet etching. The morphology of nano-roughened surfaces is analyzed by the atomic force microscope (AFM) and significantly related to the enhancement factor of the LED output power. The output power shows 80% increase after optimizing the nano-roughened morphology of n-side surface, as compared to the ordinary flat surface LED.

Original languageEnglish
Pages (from-to)157-160
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume138
Issue number2
DOIs
Publication statusPublished - 2007 Mar 25

Keywords

  • AlGaInP-based LEDs
  • Chemical wet etching
  • Nano-roughening

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency'. Together they form a unique fingerprint.

  • Cite this