Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency

Y. J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

A chemical wet etching technique is presented to form a nano-roughened surface with triangle-like morphology on n-side-up AlGaInP-based LEDs fabricated by adopting adhesive layer bonding scheme. A simple and commonly used H3PO4-based solution was applied for chemical wet etching. The morphology of nano-roughened surfaces is analyzed by the atomic force microscope (AFM) and significantly related to the enhancement factor of the LED output power. The output power shows 80% increase after optimizing the nano-roughened morphology of n-side surface, as compared to the ordinary flat surface LED.

Original languageEnglish
Pages (from-to)157-160
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume138
Issue number2
DOIs
Publication statusPublished - 2007 Mar 25

Keywords

  • AlGaInP-based LEDs
  • Chemical wet etching
  • Nano-roughening

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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