Nano-crystallized titanium oxide resistive memory with uniform switching and long endurance

We report a novel resistive random access memory using tri-layer dielectrics of GeO _x /nano-crystal TiO₂/TaON and low cost top Ni and bottom TaN electrodes. Excellent device performance of ultra-low 720 fJ switching energy, tight distributions of set/reset currents, and exceptionally long endurance of 5×10⁹ cycles were achieved simultaneously. Such excellent endurance may create new applications such as those used for Data Centers that are ascribed to the higher-κ nano-crystal TiO₂, hopping pass via grain boundaries, and fast switching speed of 100 ns to improve the dielectric fatigue during endurance stress.