TY - JOUR
T1 - Nano-crystallized titanium oxide resistive memory with uniform switching and long endurance
AU - Cheng, C. H.
AU - Chin, Albert
PY - 2013/4
Y1 - 2013/4
N2 - We report a novel resistive random access memory using tri-layer dielectrics of GeO x /nano-crystal TiO2/TaON and low cost top Ni and bottom TaN electrodes. Excellent device performance of ultra-low 720 fJ switching energy, tight distributions of set/reset currents, and exceptionally long endurance of 5×109 cycles were achieved simultaneously. Such excellent endurance may create new applications such as those used for Data Centers that are ascribed to the higher-κ nano-crystal TiO2, hopping pass via grain boundaries, and fast switching speed of 100 ns to improve the dielectric fatigue during endurance stress.
AB - We report a novel resistive random access memory using tri-layer dielectrics of GeO x /nano-crystal TiO2/TaON and low cost top Ni and bottom TaN electrodes. Excellent device performance of ultra-low 720 fJ switching energy, tight distributions of set/reset currents, and exceptionally long endurance of 5×109 cycles were achieved simultaneously. Such excellent endurance may create new applications such as those used for Data Centers that are ascribed to the higher-κ nano-crystal TiO2, hopping pass via grain boundaries, and fast switching speed of 100 ns to improve the dielectric fatigue during endurance stress.
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U2 - 10.1007/s00339-013-7547-0
DO - 10.1007/s00339-013-7547-0
M3 - Article
AN - SCOPUS:84874948706
SN - 0947-8396
VL - 111
SP - 203
EP - 207
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 1
ER -