Nano-crystallized titanium oxide resistive memory with uniform switching and long endurance

Chun-Hu Cheng, Albert Chin

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report a novel resistive random access memory using tri-layer dielectrics of GeO x /nano-crystal TiO2/TaON and low cost top Ni and bottom TaN electrodes. Excellent device performance of ultra-low 720 fJ switching energy, tight distributions of set/reset currents, and exceptionally long endurance of 5×109 cycles were achieved simultaneously. Such excellent endurance may create new applications such as those used for Data Centers that are ascribed to the higher-κ nano-crystal TiO2, hopping pass via grain boundaries, and fast switching speed of 100 ns to improve the dielectric fatigue during endurance stress.

Original languageEnglish
Pages (from-to)203-207
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume111
Issue number1
DOIs
Publication statusPublished - 2013 Apr 1

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Titanium oxides
Durability
Data storage equipment
Crystals
Grain boundaries
Fatigue of materials
Electrodes
titanium dioxide
Costs

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

Cite this

Nano-crystallized titanium oxide resistive memory with uniform switching and long endurance. / Cheng, Chun-Hu; Chin, Albert.

In: Applied Physics A: Materials Science and Processing, Vol. 111, No. 1, 01.04.2013, p. 203-207.

Research output: Contribution to journalArticle

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