Multitechnique characterization of sandwiched Si/SiGe/Si heterostructures

Z. C. Feng*, T. R. Yang, J. Zhao, R. P.G. Karunasiri, W. Lu, W. E. Collins

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review


Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including x-ray diffraction (XRD), photoluminescence (PL), Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si1-xGex layer. The Ge compositions and layer thicknesses were precisely determined by RBS. Ion channeling indicated good crystalline perfection. Raman spectra exhibited the characteristic Ge-Ge and Ge-Si vibration modes and the Ge-Si alloying features. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth. SIMS depth profiles showed that the cap Si/SiGe interfaces are sharp with slight Ge interdiffusion only.

Original languageEnglish
Number of pages10
Publication statusPublished - 2004
EventSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8


OtherSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
Country/TerritoryUnited States
CityHonolulu, HI

ASJC Scopus subject areas

  • General Engineering


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