Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

Chun Yu Liao; Kuo Yu Hsiang; Zhao Feng Lou; Chen Ying Lin; Yi Ju Tseng; Han Chen Tseng; Zhi Xian Li; Wei Chang Ray; Fu Sheng Chang; Chun Chieh Wang; Tzu Chiang Chen; Chih Sheng Chang; Min Hung Lee

doi:10.1109/TUFFC.2022.3165047

Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

Chun Yu Liao, Kuo Yu Hsiang, Zhao Feng Lou, Chen Ying Lin, Yi Ju Tseng, Han Chen Tseng, Zhi Xian Li, Wei Chang Ray, Fu Sheng Chang, Chun Chieh Wang, Tzu Chiang Chen^*, Chih Sheng Chang^*, Min Hung Lee^*

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

An ultralow program/erase voltage (VP/E\ = 4 V) is demonstrated by using an antiferroelectric-ferroelectric field-effect transistor (AFE-FE-FET) through a multipeak coercive E -field (EC ) concept for a four-level stable state with outstanding endurance (>105 cycles) and data retention (>104 s at 65 °C). The mixture of ferroelectric (FE) and AFE domains can provide stable multistate and data storage with zero bias for multilevel cell (MLC) applications. HfZrO2 (HZO) with AFE-FE assembles an orthorhombic/tetragonal (o/t) phase composition and is achieved by [Zr] modulation in an HZO system. MLC characteristics not only improve high-density nonvolatile memory (NVM) but are also beneficial to neuromorphic device applications.

Original language	English
Pages (from-to)	2214-2221
Number of pages	8
Journal	IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume	69
Issue number	6
DOIs	https://doi.org/10.1109/TUFFC.2022.3165047
Publication status	Published - 2022 Jun 1

Keywords

Antiferroelectric (AFE)
ferroelectric (FE)
field-effect transistor (FET)
multilevel

ASJC Scopus subject areas

Instrumentation
Acoustics and Ultrasonics
Electrical and Electronic Engineering

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10.1109/TUFFC.2022.3165047

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Liao, C. Y., Hsiang, K. Y., Lou, Z. F., Lin, C. Y., Tseng, Y. J., Tseng, H. C., Li, Z. X., Ray, W. C., Chang, F. S., Wang, C. C., Chen, T. C., Chang, C. S., & Lee, M. H. (2022). Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs). IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 69(6), 2214-2221. https://doi.org/10.1109/TUFFC.2022.3165047

Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs). / Liao, Chun Yu; Hsiang, Kuo Yu; Lou, Zhao Feng et al.
In: IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, Vol. 69, No. 6, 01.06.2022, p. 2214-2221.

Research output: Contribution to journal › Article › peer-review

Liao, CY, Hsiang, KY, Lou, ZF, Lin, CY, Tseng, YJ, Tseng, HC, Li, ZX, Ray, WC, Chang, FS, Wang, CC, Chen, TC, Chang, CS & Lee, MH 2022, 'Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)', IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 69, no. 6, pp. 2214-2221. https://doi.org/10.1109/TUFFC.2022.3165047

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abstract = "An ultralow program/erase voltage (VP/E\ = 4 V) is demonstrated by using an antiferroelectric-ferroelectric field-effect transistor (AFE-FE-FET) through a multipeak coercive E -field (EC ) concept for a four-level stable state with outstanding endurance (>105 cycles) and data retention (>104 s at 65 °C). The mixture of ferroelectric (FE) and AFE domains can provide stable multistate and data storage with zero bias for multilevel cell (MLC) applications. HfZrO2 (HZO) with AFE-FE assembles an orthorhombic/tetragonal (o/t) phase composition and is achieved by [Zr] modulation in an HZO system. MLC characteristics not only improve high-density nonvolatile memory (NVM) but are also beneficial to neuromorphic device applications.",

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AU - Tseng, Yi Ju

AU - Tseng, Han Chen

AU - Li, Zhi Xian

AU - Ray, Wei Chang

AU - Chang, Fu Sheng

AU - Wang, Chun Chieh

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AU - Chang, Chih Sheng

AU - Lee, Min Hung

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AB - An ultralow program/erase voltage (VP/E\ = 4 V) is demonstrated by using an antiferroelectric-ferroelectric field-effect transistor (AFE-FE-FET) through a multipeak coercive E -field (EC ) concept for a four-level stable state with outstanding endurance (>105 cycles) and data retention (>104 s at 65 °C). The mixture of ferroelectric (FE) and AFE domains can provide stable multistate and data storage with zero bias for multilevel cell (MLC) applications. HfZrO2 (HZO) with AFE-FE assembles an orthorhombic/tetragonal (o/t) phase composition and is achieved by [Zr] modulation in an HZO system. MLC characteristics not only improve high-density nonvolatile memory (NVM) but are also beneficial to neuromorphic device applications.

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Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

Abstract

Keywords

ASJC Scopus subject areas

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