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Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2for High-Density Nonvolatile Memory

  • C. Y. Liao
  • , K. Y. Hsiang
  • , F. C. Hsieh
  • , S. H. Chiang
  • , S. H. Chang
  • , J. H. Liu
  • , C. F. Lou
  • , C. Y. Lin
  • , T. C. Chen
  • , C. S. Chang
  • , M. H. Lee*
    • *Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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