Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2for High-Density Nonvolatile Memory

C. Y. Liao; K. Y. Hsiang; F. C. Hsieh; S. H. Chiang; S. H. Chang; J. H. Liu; C. F. Lou; C. Y. Lin; T. C. Chen; C. S. Chang; M. H. Lee

doi:10.1109/LED.2021.3060589

Multibit Ferroelectric FET Based on Nonidentical Double HfZrO₂for High-Density Nonvolatile Memory

C. Y. Liao
, K. Y. Hsiang
, F. C. Hsieh
, S. H. Chiang
, S. H. Chang
, J. H. Liu
, C. F. Lou
, C. Y. Lin
, T. C. Chen
, C. S. Chang
, M. H. Lee^*

^*Corresponding author for this work

Institute and Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

84 Citations (Scopus)

Abstract

A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as \vert {V}{P/{E}}\vert = {5} V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.

Original language	English
Article number	9358194
Pages (from-to)	617-620
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	42
Issue number	4
DOIs	https://doi.org/10.1109/LED.2021.3060589
Publication status	Published - 2021 Apr

Keywords

FeFET
Multilevel
ferroelectric

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2021.3060589

Cite this

@article{407e9689ace147e59a4037a54cbb60b4,

title = "Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2for High-Density Nonvolatile Memory",

abstract = "A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as \textbackslash{}vert \{V\}\{P/\{E\}\}\textbackslash{}vert = \{5\} V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.",

keywords = "FeFET, Multilevel, ferroelectric",

author = "Liao, \{C. Y.\} and Hsiang, \{K. Y.\} and Hsieh, \{F. C.\} and Chiang, \{S. H.\} and Chang, \{S. H.\} and Liu, \{J. H.\} and Lou, \{C. F.\} and Lin, \{C. Y.\} and Chen, \{T. C.\} and Chang, \{C. S.\} and Lee, \{M. H.\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2021",

month = apr,

doi = "10.1109/LED.2021.3060589",

language = "English",

volume = "42",

pages = "617--620",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2for High-Density Nonvolatile Memory

AU - Liao, C. Y.

AU - Hsiang, K. Y.

AU - Hsieh, F. C.

AU - Chiang, S. H.

AU - Chang, S. H.

AU - Liu, J. H.

AU - Lou, C. F.

AU - Lin, C. Y.

AU - Chen, T. C.

AU - Chang, C. S.

AU - Lee, M. H.

PY - 2021/4

Y1 - 2021/4

N2 - A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as \vert {V}{P/{E}}\vert = {5} V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.

AB - A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as \vert {V}{P/{E}}\vert = {5} V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.

KW - FeFET

KW - Multilevel

KW - ferroelectric

UR - https://www.scopus.com/pages/publications/85101751495

UR - https://www.scopus.com/pages/publications/85101751495#tab=citedBy

U2 - 10.1109/LED.2021.3060589

DO - 10.1109/LED.2021.3060589

M3 - Article

AN - SCOPUS:85101751495

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VL - 42

SP - 617

EP - 620

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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