@article{407e9689ace147e59a4037a54cbb60b4,
title = "Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2for High-Density Nonvolatile Memory",
abstract = "A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as \vert {V}{P/{E}}\vert = {5} V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.",
keywords = "FeFET, Multilevel, ferroelectric",
author = "Liao, {C. Y.} and Hsiang, {K. Y.} and Hsieh, {F. C.} and Chiang, {S. H.} and Chang, {S. H.} and Liu, {J. H.} and Lou, {C. F.} and Lin, {C. Y.} and Chen, {T. C.} and Chang, {C. S.} and Lee, {M. H.}",
note = "Funding Information: Manuscript received January 29, 2021; revised February 16, 2021; accepted February 16, 2021. Date of publication February 19, 2021; date of current version March 24, 2021. This work was supported in part by the Ministry of Science and Technology (MOST) under Grant 109-2218-E-003-003 and Grant 109-2622-8-002-003 and in part by the Taiwan Semiconductor Research Institute (TSRI), Taiwan. The review of this letter was arranged by Editor U. Schroeder. (Corresponding authors: T.-C. Chen; C.-S. Chang; M. H. Lee.) C.-Y. Liao, F.-C. Hsieh, S.-H. Chiang, S.-H. Chang, J.-H. Liu, C.-F. Lou, C.-Y. Lin, and M. H. Lee are with the Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan (e-mail: mhlee@ntnu.edu.tw). Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2021",
month = apr,
doi = "10.1109/LED.2021.3060589",
language = "English",
volume = "42",
pages = "617--620",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",
}