Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2for High-Density Nonvolatile Memory

C. Y. Liao, K. Y. Hsiang, F. C. Hsieh, S. H. Chiang, S. H. Chang, J. H. Liu, C. F. Lou, C. Y. Lin, T. C. Chen, C. S. Chang, M. H. Lee*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as \vert {V}{P/{E}}\vert = {5} V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.

Original languageEnglish
Article number9358194
Pages (from-to)617-620
Number of pages4
JournalIEEE Electron Device Letters
Volume42
Issue number4
DOIs
Publication statusPublished - 2021 Apr

Keywords

  • FeFET
  • Multilevel
  • ferroelectric

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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