Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory

C. Y. Liao; K. Y. Hsiang; F. C. Hsieh; S. H. Chiang; S. H. Chang; J. H. Liu; C. F. Lou; C. Y. Lin; T. C. Chen; C. S. Changa; M. H. Lee

doi:10.1109/LED.2021.3060589

Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory

C. Y. Liao, K. Y. Hsiang, F. C. Hsieh, S. H. Chiang, S. H. Chang, J. H. Liu, C. F. Lou, C. Y. Lin, T. C. Chen, C. S. Changa, M. H. Lee

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as |VP/E| = 5 V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.

Original language	English
Article number	9358194
Pages (from-to)	617-620
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	42
Issue number	4
DOIs	https://doi.org/10.1109/LED.2021.3060589
Publication status	Accepted/In press - 2021

Keywords

Erbium
FeFET
FeFETs
Ferroelectric
Iron
Logic gates
Multilevel
Nonvolatile memory
Probability density function
Tin

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory. / Liao, C. Y.; Hsiang, K. Y.; Hsieh, F. C.; Chiang, S. H.; Chang, S. H.; Liu, J. H.; Lou, C. F.; Lin, C. Y.; Chen, T. C.; Changa, C. S.; Lee, M. H.

In: IEEE Electron Device Letters, Vol. 42, No. 4, 9358194, 2021, p. 617-620.

Research output: Contribution to journal › Article › peer-review

@article{895da1bdcf004027ad252c11947d652f,

title = "Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory",

abstract = "A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as |VP/E| = 5 V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.",

keywords = "Erbium, FeFET, FeFETs, Ferroelectric, Iron, Logic gates, Multilevel, Nonvolatile memory, Probability density function, Tin",

author = "Liao, {C. Y.} and Hsiang, {K. Y.} and Hsieh, {F. C.} and Chiang, {S. H.} and Chang, {S. H.} and Liu, {J. H.} and Lou, {C. F.} and Lin, {C. Y.} and Chen, {T. C.} and Changa, {C. S.} and Lee, {M. H.}",

year = "2021",

doi = "10.1109/LED.2021.3060589",

language = "English",

volume = "42",

pages = "617--620",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory

AU - Liao, C. Y.

AU - Hsiang, K. Y.

AU - Hsieh, F. C.

AU - Chiang, S. H.

AU - Chang, S. H.

AU - Liu, J. H.

AU - Lou, C. F.

AU - Lin, C. Y.

AU - Chen, T. C.

AU - Changa, C. S.

AU - Lee, M. H.

PY - 2021

Y1 - 2021

N2 - A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as |VP/E| = 5 V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.

AB - A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as |VP/E| = 5 V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.

KW - Erbium

KW - FeFET

KW - FeFETs

KW - Ferroelectric

KW - Iron

KW - Logic gates

KW - Multilevel

KW - Nonvolatile memory

KW - Probability density function

KW - Tin

UR - http://www.scopus.com/inward/record.url?scp=85101751495&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85101751495&partnerID=8YFLogxK

U2 - 10.1109/LED.2021.3060589

DO - 10.1109/LED.2021.3060589

M3 - Article

AN - SCOPUS:85101751495

VL - 42

SP - 617

EP - 620

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 4

M1 - 9358194

ER -

Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory

Abstract

Keywords

ASJC Scopus subject areas

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