Abstract
A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as |VP/E| = 5 V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.
Original language | English |
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Article number | 9358194 |
Pages (from-to) | 617-620 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 42 |
Issue number | 4 |
DOIs | |
Publication status | Accepted/In press - 2021 |
Keywords
- Erbium
- FeFET
- FeFETs
- Ferroelectric
- Iron
- Logic gates
- Multilevel
- Nonvolatile memory
- Probability density function
- Tin
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering