Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory

C. Y. Liao, K. Y. Hsiang, F. C. Hsieh, S. H. Chiang, S. H. Chang, J. H. Liu, C. F. Lou, C. Y. Lin, T. C. Chen, C. S. Changa, M. H. Lee

Research output: Contribution to journalArticlepeer-review

Abstract

A double-HZO (HfZrO2) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as |VP/E| = 5 V, 2-bit endurance > 105 cycles and retention > 104 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.

Original languageEnglish
Article number9358194
Pages (from-to)617-620
Number of pages4
JournalIEEE Electron Device Letters
Volume42
Issue number4
DOIs
Publication statusAccepted/In press - 2021

Keywords

  • Erbium
  • FeFET
  • FeFETs
  • Ferroelectric
  • Iron
  • Logic gates
  • Multilevel
  • Nonvolatile memory
  • Probability density function
  • Tin

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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