Morphotropic phase boundary (MPB)-engineered HfO2 to reduce coercive field (Ec) for energy-efficient FeFETs

J. Y. Lee; Z. F. Luo; M. H. Lee

doi:10.1016/j.mssp.2026.110806

Morphotropic phase boundary (MPB)-engineered HfO₂ to reduce coercive field (E_c) for energy-efficient FeFETs

J. Y. Lee
, Z. F. Luo
, M. H. Lee^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Ferroelectric field-effect transistors (FeFETs) based on Hf_1-xZr_xO₂ are investigated with a focus on morphotropic phase boundary (MPB) engineering to simultaneously enhance polarization and reduce coercive field. A super-laminated HZO/ZrO₂/HZO (HZZ) stack was fabricated by ALD, showing a dielectric constant of 46 and a remanent polarization of 41 μC/cm² with coercive field (E_c) reduced to 0.8 MV/cm. Compared to HZO and HfO₂/ZrO₂/HfO₂ (HZH), HZZ enables a wider memory window of 1.6 V under a smaller applied sweep bias for efficient polarization switching at low operation voltage. Endurance measurements demonstrate stable program/erase cycling up to 10¹¹ cycles with an on/off ratio exceeding 10⁵. These results highlight the HZZ-FeFET as a scalable and energy-efficient device platform, offering robust reliability and promising potential for high-density nonvolatile memory and neuromorphic computing.

Original language	English
Article number	110806
Journal	Materials Science in Semiconductor Processing
Volume	212
DOIs	https://doi.org/10.1016/j.mssp.2026.110806
Publication status	Published - 2026 Sept
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2026.110806

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@article{bd70936cef834dabb889654fb6d976d1,

title = "Morphotropic phase boundary (MPB)-engineered HfO2 to reduce coercive field (Ec) for energy-efficient FeFETs",

abstract = "Ferroelectric field-effect transistors (FeFETs) based on Hf1-xZrxO2 are investigated with a focus on morphotropic phase boundary (MPB) engineering to simultaneously enhance polarization and reduce coercive field. A super-laminated HZO/ZrO2/HZO (HZZ) stack was fabricated by ALD, showing a dielectric constant of 46 and a remanent polarization of 41 μC/cm2 with coercive field (Ec) reduced to 0.8 MV/cm. Compared to HZO and HfO2/ZrO2/HfO2 (HZH), HZZ enables a wider memory window of 1.6 V under a smaller applied sweep bias for efficient polarization switching at low operation voltage. Endurance measurements demonstrate stable program/erase cycling up to 1011 cycles with an on/off ratio exceeding 105. These results highlight the HZZ-FeFET as a scalable and energy-efficient device platform, offering robust reliability and promising potential for high-density nonvolatile memory and neuromorphic computing.",

author = "Lee, \{J. Y.\} and Luo, \{Z. F.\} and Lee, \{M. H.\}",

note = "Publisher Copyright: {\textcopyright} 2026 Elsevier Ltd",

year = "2026",

month = sep,

doi = "10.1016/j.mssp.2026.110806",

language = "English",

volume = "212",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

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TY - JOUR

T1 - Morphotropic phase boundary (MPB)-engineered HfO2 to reduce coercive field (Ec) for energy-efficient FeFETs

AU - Lee, J. Y.

AU - Luo, Z. F.

AU - Lee, M. H.

PY - 2026/9

Y1 - 2026/9

N2 - Ferroelectric field-effect transistors (FeFETs) based on Hf1-xZrxO2 are investigated with a focus on morphotropic phase boundary (MPB) engineering to simultaneously enhance polarization and reduce coercive field. A super-laminated HZO/ZrO2/HZO (HZZ) stack was fabricated by ALD, showing a dielectric constant of 46 and a remanent polarization of 41 μC/cm2 with coercive field (Ec) reduced to 0.8 MV/cm. Compared to HZO and HfO2/ZrO2/HfO2 (HZH), HZZ enables a wider memory window of 1.6 V under a smaller applied sweep bias for efficient polarization switching at low operation voltage. Endurance measurements demonstrate stable program/erase cycling up to 1011 cycles with an on/off ratio exceeding 105. These results highlight the HZZ-FeFET as a scalable and energy-efficient device platform, offering robust reliability and promising potential for high-density nonvolatile memory and neuromorphic computing.

AB - Ferroelectric field-effect transistors (FeFETs) based on Hf1-xZrxO2 are investigated with a focus on morphotropic phase boundary (MPB) engineering to simultaneously enhance polarization and reduce coercive field. A super-laminated HZO/ZrO2/HZO (HZZ) stack was fabricated by ALD, showing a dielectric constant of 46 and a remanent polarization of 41 μC/cm2 with coercive field (Ec) reduced to 0.8 MV/cm. Compared to HZO and HfO2/ZrO2/HfO2 (HZH), HZZ enables a wider memory window of 1.6 V under a smaller applied sweep bias for efficient polarization switching at low operation voltage. Endurance measurements demonstrate stable program/erase cycling up to 1011 cycles with an on/off ratio exceeding 105. These results highlight the HZZ-FeFET as a scalable and energy-efficient device platform, offering robust reliability and promising potential for high-density nonvolatile memory and neuromorphic computing.

UR - https://www.scopus.com/pages/publications/105039252445

UR - https://www.scopus.com/pages/publications/105039252445#tab=citedBy

U2 - 10.1016/j.mssp.2026.110806

DO - 10.1016/j.mssp.2026.110806

M3 - Article

AN - SCOPUS:105039252445

SN - 1369-8001

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JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

M1 - 110806

ER -

Morphotropic phase boundary (MPB)-engineered HfO₂ to reduce coercive field (E_c) for energy-efficient FeFETs

Abstract

ASJC Scopus subject areas

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