Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors

Ya Ju Lee*, Zu Po Yang, Pin Guang Chen, Yung An Hsieh, Yung Chi Yao, Ming Han Liao, Min Hung Lee, Mei Tan Wang, Jung Min Hwang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

61 Citations (Scopus)


In this study, we report a novel monolithically integrated GaNbased light-emitting diode (LED) with metal-oxide-semiconductor fieldeffect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.

Original languageEnglish
Pages (from-to)A1589-A1595
JournalOptics Express
Issue number21
Publication statusPublished - 2014 Oct 20

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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