Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors

Ya Ju Lee, Zu Po Yang, Pin Guang Chen, Yung An Hsieh, Yung Chi Yao, Ming Han Liao, Min Hung Lee, Mei Tan Wang, Jung Min Hwang

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

In this study, we report a novel monolithically integrated GaNbased light-emitting diode (LED) with metal-oxide-semiconductor fieldeffect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.

Original languageEnglish
Pages (from-to)A1589-A1595
JournalOptics Express
Volume22
Issue number21
DOIs
Publication statusPublished - 2014 Oct 20

Fingerprint

metal oxide semiconductors
transistors
light emitting diodes
field effect transistors
diodes
communication
illuminating
optical communication
manufacturing
etching
modulation
electric potential

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Lee, Y. J., Yang, Z. P., Chen, P. G., Hsieh, Y. A., Yao, Y. C., Liao, M. H., ... Hwang, J. M. (2014). Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors. Optics Express, 22(21), A1589-A1595. https://doi.org/10.1364/OE.22.0A1589

Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors. / Lee, Ya Ju; Yang, Zu Po; Chen, Pin Guang; Hsieh, Yung An; Yao, Yung Chi; Liao, Ming Han; Lee, Min Hung; Wang, Mei Tan; Hwang, Jung Min.

In: Optics Express, Vol. 22, No. 21, 20.10.2014, p. A1589-A1595.

Research output: Contribution to journalArticle

Lee, YJ, Yang, ZP, Chen, PG, Hsieh, YA, Yao, YC, Liao, MH, Lee, MH, Wang, MT & Hwang, JM 2014, 'Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors', Optics Express, vol. 22, no. 21, pp. A1589-A1595. https://doi.org/10.1364/OE.22.0A1589
Lee, Ya Ju ; Yang, Zu Po ; Chen, Pin Guang ; Hsieh, Yung An ; Yao, Yung Chi ; Liao, Ming Han ; Lee, Min Hung ; Wang, Mei Tan ; Hwang, Jung Min. / Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors. In: Optics Express. 2014 ; Vol. 22, No. 21. pp. A1589-A1595.
@article{9cadbcace0c5484798d6b17d7835b890,
title = "Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors",
abstract = "In this study, we report a novel monolithically integrated GaNbased light-emitting diode (LED) with metal-oxide-semiconductor fieldeffect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.",
author = "Lee, {Ya Ju} and Yang, {Zu Po} and Chen, {Pin Guang} and Hsieh, {Yung An} and Yao, {Yung Chi} and Liao, {Ming Han} and Lee, {Min Hung} and Wang, {Mei Tan} and Hwang, {Jung Min}",
year = "2014",
month = "10",
day = "20",
doi = "10.1364/OE.22.0A1589",
language = "English",
volume = "22",
pages = "A1589--A1595",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "21",

}

TY - JOUR

T1 - Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors

AU - Lee, Ya Ju

AU - Yang, Zu Po

AU - Chen, Pin Guang

AU - Hsieh, Yung An

AU - Yao, Yung Chi

AU - Liao, Ming Han

AU - Lee, Min Hung

AU - Wang, Mei Tan

AU - Hwang, Jung Min

PY - 2014/10/20

Y1 - 2014/10/20

N2 - In this study, we report a novel monolithically integrated GaNbased light-emitting diode (LED) with metal-oxide-semiconductor fieldeffect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.

AB - In this study, we report a novel monolithically integrated GaNbased light-emitting diode (LED) with metal-oxide-semiconductor fieldeffect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.

UR - http://www.scopus.com/inward/record.url?scp=84908161291&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84908161291&partnerID=8YFLogxK

U2 - 10.1364/OE.22.0A1589

DO - 10.1364/OE.22.0A1589

M3 - Article

C2 - 25607316

AN - SCOPUS:84908161291

VL - 22

SP - A1589-A1595

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 21

ER -