Abstract
We present some comments to the paper “Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment” [Opt. Express 22, A1589 (2014)].
| Original language | English |
|---|---|
| Pages (from-to) | A110 |
| Journal | Optics Express |
| Volume | 26 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2018 Jan 22 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
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