Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply

Ya Ju Lee, Zu Po Yang, Pin Guang Chen, Yung An Hsieh, Yung Chi Yao, Ming Han Liao, Min Hung Lee, Mei Tan Wang, Jung Min Hwang

    Research output: Contribution to journalReview articlepeer-review

    Abstract

    We present some comments to the paper “Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment” [Opt. Express 22, A1589 (2014)].

    Original languageEnglish
    Pages (from-to)A110
    JournalOptics Express
    Volume26
    Issue number2
    DOIs
    Publication statusPublished - 2018 Jan 22

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics

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