Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply

Ya Ju Lee, Zu Po Yang, Pin Guang Chen, Yung An Hsieh, Yung Chi Yao, Ming Han Liao, Min Hung Lee, Mei Tan Wang, Jung Min Hwang

Research output: Contribution to journalReview article

Abstract

We present some comments to the paper “Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment” [Opt. Express 22, A1589 (2014)].

Original languageEnglish
Pages (from-to)A110
JournalOptics Express
Volume26
Issue number2
DOIs
Publication statusPublished - 2018 Jan 22

Fingerprint

metal oxide semiconductors
light emitting diodes
field effect transistors

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors : Reply. / Lee, Ya Ju; Yang, Zu Po; Chen, Pin Guang; Hsieh, Yung An; Yao, Yung Chi; Liao, Ming Han; Lee, Min Hung; Wang, Mei Tan; Hwang, Jung Min.

In: Optics Express, Vol. 26, No. 2, 22.01.2018, p. A110.

Research output: Contribution to journalReview article

Lee, YJ, Yang, ZP, Chen, PG, Hsieh, YA, Yao, YC, Liao, MH, Lee, MH, Wang, MT & Hwang, JM 2018, 'Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply', Optics Express, vol. 26, no. 2, pp. A110. https://doi.org/10.1364/OE.26.00A110
Lee, Ya Ju ; Yang, Zu Po ; Chen, Pin Guang ; Hsieh, Yung An ; Yao, Yung Chi ; Liao, Ming Han ; Lee, Min Hung ; Wang, Mei Tan ; Hwang, Jung Min. / Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors : Reply. In: Optics Express. 2018 ; Vol. 26, No. 2. pp. A110.
@article{068d5ac558da42a8a172420cbce3b950,
title = "Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply",
abstract = "We present some comments to the paper “Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment” [Opt. Express 22, A1589 (2014)].",
author = "Lee, {Ya Ju} and Yang, {Zu Po} and Chen, {Pin Guang} and Hsieh, {Yung An} and Yao, {Yung Chi} and Liao, {Ming Han} and Lee, {Min Hung} and Wang, {Mei Tan} and Hwang, {Jung Min}",
year = "2018",
month = "1",
day = "22",
doi = "10.1364/OE.26.00A110",
language = "English",
volume = "26",
pages = "A110",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "2",

}

TY - JOUR

T1 - Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors

T2 - Reply

AU - Lee, Ya Ju

AU - Yang, Zu Po

AU - Chen, Pin Guang

AU - Hsieh, Yung An

AU - Yao, Yung Chi

AU - Liao, Ming Han

AU - Lee, Min Hung

AU - Wang, Mei Tan

AU - Hwang, Jung Min

PY - 2018/1/22

Y1 - 2018/1/22

N2 - We present some comments to the paper “Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment” [Opt. Express 22, A1589 (2014)].

AB - We present some comments to the paper “Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment” [Opt. Express 22, A1589 (2014)].

UR - http://www.scopus.com/inward/record.url?scp=85040933595&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85040933595&partnerID=8YFLogxK

U2 - 10.1364/OE.26.00A110

DO - 10.1364/OE.26.00A110

M3 - Review article

AN - SCOPUS:85040933595

VL - 26

SP - A110

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 2

ER -