Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply

Ya Ju Lee, Zu Po Yang, Pin Guang Chen, Yung An Hsieh, Yung Chi Yao, Ming Han Liao, Min Hung Lee, Mei Tan Wang, Jung Min Hwang

Research output: Contribution to journalReview article

Abstract

We present some comments to the paper “Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment” [Opt. Express 22, A1589 (2014)].

Original languageEnglish
Pages (from-to)A110
JournalOptics Express
Volume26
Issue number2
DOIs
Publication statusPublished - 2018 Jan 22

    Fingerprint

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Lee, Y. J., Yang, Z. P., Chen, P. G., Hsieh, Y. A., Yao, Y. C., Liao, M. H., Lee, M. H., Wang, M. T., & Hwang, J. M. (2018). Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply. Optics Express, 26(2), A110. https://doi.org/10.1364/OE.26.00A110