Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply

Ya Ju Lee, Zu Po Yang, Pin Guang Chen, Yung An Hsieh, Yung Chi Yao, Ming Han Liao, Min Hung Lee, Mei Tan Wang, Jung Min Hwang

Research output: Contribution to journalReview article

Abstract

We present some comments to the paper “Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment” [Opt. Express 22, A1589 (2014)].

Original languageEnglish
Pages (from-to)A110
JournalOptics Express
Volume26
Issue number2
DOIs
Publication statusPublished - 2018 Jan 22

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Lee, Y. J., Yang, Z. P., Chen, P. G., Hsieh, Y. A., Yao, Y. C., Liao, M. H., Lee, M. H., Wang, M. T., & Hwang, J. M. (2018). Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply. Optics Express, 26(2), A110. https://doi.org/10.1364/OE.26.00A110