Molecular dynamics simulation of hydrogen isotope-terminated silicon(111) and (110) surfaces: Calculation of vibrational energy relaxation rates of hydrogen isotope stretching modes

Ying Chieh Sun*, Hsiu Feng Lu, Ming Shun Ho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Molecular dynamics simulation of hydrogen isotope-terminated silicon(111) and (110) surfaces: Calculation of vibrational energy relaxation rates of hydrogen isotope stretching modes'. Together they form a unique fingerprint.

Chemistry

INIS