Modulation of photoluminescence in a MoS₂ device through tuning the quantum tunneling effect

Transition metal dichalcogenide (TMD) materials, such as molybdenum disulfide (MoS₂), have emerged as promising platforms for exploring electrically tunable light–matter interactions, which are critical for designing high-performance photodetector systems. In this study, we investigate the advancements in quantum tunneling MoS₂ field-effect transistors (QT-MoS₂ FETs) and their optoelectronic properties, with a focus on photoresponse behavior and photoluminescence (PL) spectral variations driven by photoinduced tunneling currents through oxide layers. The results demonstrate that tunneling-induced exciton and trion dissociation effects lead to a pronounced blue shift in PL spectral peaks and significant changes in light intensity. Compared to normal MoS₂ FETs, QT-MoS₂ FETs exhibit considerably enhanced PL spectral modulation under applied gate bias, underscoring the critical role of tunneling currents in governing optical responses. This work advances the understanding of 2D material-based optoelectronics and highlights their potential for next-generation photodetector applications.