Modulation of magnetic anisotropy in Fe/Si(111) thin films through interface property

Wen-Chin Lin, Tsung Ying Ho, Chiao Sung Chi, Cheng Jui Tsai

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The magnetic anisotropy of Fe thin films grown on Si(111) was controlled by either oblique deposition of Fe or using an intermediate layer between the Fe film and Si substrate. By 45 and 65 off-normal deposition of Fe, a clear uniaxial magnetic anisotropy was observed in Pd capped Fe/Si(111) films. This uniaxial magnetic anisotropy dominated the magnetic switching behavior, as well as the magnetic hysteresis loops. In contrast to Fe/Si(111) and Fe/Pd-Si/Si(111), a 600 C-annealed Fe-Si intermediate layer enhanced the coercivity (Hc) of the Fe film from 4 × 103 to 10 × 103 A/m. The simple methods of oblique deposition and suitable intermediate layer modulated the magnetic behavior of magnetic Fe thin films on Si(111) and are valuable for future applications.

Original languageEnglish
Pages (from-to)355-359
Number of pages5
JournalThin Solid Films
Volume542
DOIs
Publication statusPublished - 2013 Sep 2

Fingerprint

Magnetic anisotropy
Modulation
modulation
Thin films
anisotropy
thin films
magnetic switching
Magnetic hysteresis
Hysteresis loops
Coercive force
coercivity
hysteresis
Substrates

Keywords

  • Magnetic anisotropy
  • Magnetism
  • Oblique deposition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Modulation of magnetic anisotropy in Fe/Si(111) thin films through interface property. / Lin, Wen-Chin; Ho, Tsung Ying; Chi, Chiao Sung; Tsai, Cheng Jui.

In: Thin Solid Films, Vol. 542, 02.09.2013, p. 355-359.

Research output: Contribution to journalArticle

Lin, Wen-Chin ; Ho, Tsung Ying ; Chi, Chiao Sung ; Tsai, Cheng Jui. / Modulation of magnetic anisotropy in Fe/Si(111) thin films through interface property. In: Thin Solid Films. 2013 ; Vol. 542. pp. 355-359.
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