Modified growth of Ge quantum dots using C 2 H 4 mediation by ultra-high vacuum chemical vapor deposition

S. W. Lee, P. S. Chen, S. L. Cheng, M. H. Lee, H. T. Chang, C. H. Lee, C. W. Liu

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    C 2 H 4 mediations were used to modify the Stranski-Krastanow growth mode of Ge dots on Si(0 0 1) at 550 °C by ultra-high vacuum chemical vapor deposition. With appropriate C 2 H 4 -mediation to modify the Si surface, the elongated Ge hut clusters can be transformed to highly uniform Ge domes with a high Ge composition at the core. These C 2 H 4 -mediated Ge dots, almost bounded by {1 1 3} facets, have an average diameter and height of 55 and 9 nm, respectively. We propose two major mechanisms to depict the formation of these C 2 H 4 -mediated Ge dots: (i) an almost hydrogen-passivated Si surface to limit the nucleation sites for dot formation, and (ii) the incorporation of Ge atoms, repelled by the C-rich areas, into the existing Ge dots. This work provides a useful scheme to tune the topography of Ge dots in an UHV/CVD condition for possible optoelectronic applications.

    Original languageEnglish
    Pages (from-to)6261-6264
    Number of pages4
    JournalApplied Surface Science
    Volume254
    Issue number19
    DOIs
    Publication statusPublished - 2008 Jul 30

    Keywords

    • Ge
    • Quantum dot
    • Self-assembled
    • UHV/CVD

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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