Modified growth of Ge quantum dots using C 2 H 4 mediation by ultra-high vacuum chemical vapor deposition

S. W. Lee, P. S. Chen, S. L. Cheng, M. H. Lee, H. T. Chang, C. H. Lee, C. W. Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

C 2 H 4 mediations were used to modify the Stranski-Krastanow growth mode of Ge dots on Si(0 0 1) at 550 °C by ultra-high vacuum chemical vapor deposition. With appropriate C 2 H 4 -mediation to modify the Si surface, the elongated Ge hut clusters can be transformed to highly uniform Ge domes with a high Ge composition at the core. These C 2 H 4 -mediated Ge dots, almost bounded by {1 1 3} facets, have an average diameter and height of 55 and 9 nm, respectively. We propose two major mechanisms to depict the formation of these C 2 H 4 -mediated Ge dots: (i) an almost hydrogen-passivated Si surface to limit the nucleation sites for dot formation, and (ii) the incorporation of Ge atoms, repelled by the C-rich areas, into the existing Ge dots. This work provides a useful scheme to tune the topography of Ge dots in an UHV/CVD condition for possible optoelectronic applications.

Original languageEnglish
Pages (from-to)6261-6264
Number of pages4
JournalApplied Surface Science
Volume254
Issue number19
DOIs
Publication statusPublished - 2008 Jul 30

Fingerprint

Ultrahigh vacuum
Semiconductor quantum dots
Chemical vapor deposition
Domes
Optoelectronic devices
Topography
Hydrogen
Nucleation
Atoms
Chemical analysis

Keywords

  • Ge
  • Quantum dot
  • Self-assembled
  • UHV/CVD

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Modified growth of Ge quantum dots using C 2 H 4 mediation by ultra-high vacuum chemical vapor deposition . / Lee, S. W.; Chen, P. S.; Cheng, S. L.; Lee, M. H.; Chang, H. T.; Lee, C. H.; Liu, C. W.

In: Applied Surface Science, Vol. 254, No. 19, 30.07.2008, p. 6261-6264.

Research output: Contribution to journalArticle

Lee, S. W. ; Chen, P. S. ; Cheng, S. L. ; Lee, M. H. ; Chang, H. T. ; Lee, C. H. ; Liu, C. W. / Modified growth of Ge quantum dots using C 2 H 4 mediation by ultra-high vacuum chemical vapor deposition In: Applied Surface Science. 2008 ; Vol. 254, No. 19. pp. 6261-6264.
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AU - Cheng, S. L.

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AU - Chang, H. T.

AU - Lee, C. H.

AU - Liu, C. W.

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AB - C 2 H 4 mediations were used to modify the Stranski-Krastanow growth mode of Ge dots on Si(0 0 1) at 550 °C by ultra-high vacuum chemical vapor deposition. With appropriate C 2 H 4 -mediation to modify the Si surface, the elongated Ge hut clusters can be transformed to highly uniform Ge domes with a high Ge composition at the core. These C 2 H 4 -mediated Ge dots, almost bounded by {1 1 3} facets, have an average diameter and height of 55 and 9 nm, respectively. We propose two major mechanisms to depict the formation of these C 2 H 4 -mediated Ge dots: (i) an almost hydrogen-passivated Si surface to limit the nucleation sites for dot formation, and (ii) the incorporation of Ge atoms, repelled by the C-rich areas, into the existing Ge dots. This work provides a useful scheme to tune the topography of Ge dots in an UHV/CVD condition for possible optoelectronic applications.

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