Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs

Chun Yu Lin; Ming Dou Ker

doi:10.1109/ISNE.2010.5669189

Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs

Chun Yu Lin^*, Ming Dou Ker

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Silicon-controlled rectifier (SCR) has been reported with the good electrostatic discharge (ESD) robustness under the lower parasitic capacitance among ESD devices in CMOS technology. To correctly predict the performances of SCR-based ESD-protected RF circuit, it is essential for RF circuit design with accurate model of SCR device. The small-signal model of SCR in RF frequency band is proposed in this work. The measured parasitic capacitances well agree with the simulated capacitances. With the proposed small-signal model, on-chip ESD protection can be co-designed with RF circuits to eliminate the negative impacts caused by ESD protection SCR on RF performances.

Original language	English
Title of host publication	2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program
Pages	104-107
Number of pages	4
DOIs	https://doi.org/10.1109/ISNE.2010.5669189
Publication status	Published - 2010
Externally published	Yes
Event	2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Kaohsiung, Taiwan Duration: 2010 Nov 18 → 2010 Nov 19

Publication series

Name	2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program

Other

Other	2010 International Symposium on Next-Generation Electronics, ISNE 2010
Country/Territory	Taiwan
City	Kaohsiung
Period	2010/11/18 → 2010/11/19

Keywords

Electrostatic discharges (ESD)
Low-capacitance (low-C)
Modeling
Radio-frequency (RF)
Silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ISNE.2010.5669189

Cite this

Lin, C. Y., & Ker, M. D. (2010). Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs. In 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program (pp. 104-107). Article 5669189 (2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program). https://doi.org/10.1109/ISNE.2010.5669189

Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs. / Lin, Chun Yu; Ker, Ming Dou.
2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program. 2010. p. 104-107 5669189 (2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lin, CY & Ker, MD 2010, Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs. in 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program., 5669189, 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program, pp. 104-107, 2010 International Symposium on Next-Generation Electronics, ISNE 2010, Kaohsiung, Taiwan, 2010/11/18. https://doi.org/10.1109/ISNE.2010.5669189

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abstract = "Silicon-controlled rectifier (SCR) has been reported with the good electrostatic discharge (ESD) robustness under the lower parasitic capacitance among ESD devices in CMOS technology. To correctly predict the performances of SCR-based ESD-protected RF circuit, it is essential for RF circuit design with accurate model of SCR device. The small-signal model of SCR in RF frequency band is proposed in this work. The measured parasitic capacitances well agree with the simulated capacitances. With the proposed small-signal model, on-chip ESD protection can be co-designed with RF circuits to eliminate the negative impacts caused by ESD protection SCR on RF performances.",

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AB - Silicon-controlled rectifier (SCR) has been reported with the good electrostatic discharge (ESD) robustness under the lower parasitic capacitance among ESD devices in CMOS technology. To correctly predict the performances of SCR-based ESD-protected RF circuit, it is essential for RF circuit design with accurate model of SCR device. The small-signal model of SCR in RF frequency band is proposed in this work. The measured parasitic capacitances well agree with the simulated capacitances. With the proposed small-signal model, on-chip ESD protection can be co-designed with RF circuits to eliminate the negative impacts caused by ESD protection SCR on RF performances.

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Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs

Abstract

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Keywords

ASJC Scopus subject areas

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