Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs

Chun-Yu Lin, Ming Dou Ker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Silicon-controlled rectifier (SCR) has been reported with the good electrostatic discharge (ESD) robustness under the lower parasitic capacitance among ESD devices in CMOS technology. To correctly predict the performances of SCR-based ESD-protected RF circuit, it is essential for RF circuit design with accurate model of SCR device. The small-signal model of SCR in RF frequency band is proposed in this work. The measured parasitic capacitances well agree with the simulated capacitances. With the proposed small-signal model, on-chip ESD protection can be co-designed with RF circuits to eliminate the negative impacts caused by ESD protection SCR on RF performances.

Original languageEnglish
Title of host publication2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program
Pages104-107
Number of pages4
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Kaohsiung, Taiwan
Duration: 2010 Nov 182010 Nov 19

Other

Other2010 International Symposium on Next-Generation Electronics, ISNE 2010
CountryTaiwan
CityKaohsiung
Period10/11/1810/11/19

Fingerprint

Electrostatic discharge
Thyristors
Capacitance
Networks (circuits)
Frequency bands

Keywords

  • Electrostatic discharges (ESD)
  • Low-capacitance (low-C)
  • Modeling
  • Radio-frequency (RF)
  • Silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Lin, C-Y., & Ker, M. D. (2010). Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs. In 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program (pp. 104-107). [5669189] https://doi.org/10.1109/ISNE.2010.5669189

Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs. / Lin, Chun-Yu; Ker, Ming Dou.

2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program. 2010. p. 104-107 5669189.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lin, C-Y & Ker, MD 2010, Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs. in 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program., 5669189, pp. 104-107, 2010 International Symposium on Next-Generation Electronics, ISNE 2010, Kaohsiung, Taiwan, 10/11/18. https://doi.org/10.1109/ISNE.2010.5669189
Lin C-Y, Ker MD. Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs. In 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program. 2010. p. 104-107. 5669189 https://doi.org/10.1109/ISNE.2010.5669189
Lin, Chun-Yu ; Ker, Ming Dou. / Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs. 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program. 2010. pp. 104-107
@inproceedings{f96e26f1ec6540d59483115c86c44e32,
title = "Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs",
abstract = "Silicon-controlled rectifier (SCR) has been reported with the good electrostatic discharge (ESD) robustness under the lower parasitic capacitance among ESD devices in CMOS technology. To correctly predict the performances of SCR-based ESD-protected RF circuit, it is essential for RF circuit design with accurate model of SCR device. The small-signal model of SCR in RF frequency band is proposed in this work. The measured parasitic capacitances well agree with the simulated capacitances. With the proposed small-signal model, on-chip ESD protection can be co-designed with RF circuits to eliminate the negative impacts caused by ESD protection SCR on RF performances.",
keywords = "Electrostatic discharges (ESD), Low-capacitance (low-C), Modeling, Radio-frequency (RF), Silicon-controlled rectifier (SCR)",
author = "Chun-Yu Lin and Ker, {Ming Dou}",
year = "2010",
month = "12",
day = "1",
doi = "10.1109/ISNE.2010.5669189",
language = "English",
isbn = "9781424466948",
pages = "104--107",
booktitle = "2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program",

}

TY - GEN

T1 - Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs

AU - Lin, Chun-Yu

AU - Ker, Ming Dou

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Silicon-controlled rectifier (SCR) has been reported with the good electrostatic discharge (ESD) robustness under the lower parasitic capacitance among ESD devices in CMOS technology. To correctly predict the performances of SCR-based ESD-protected RF circuit, it is essential for RF circuit design with accurate model of SCR device. The small-signal model of SCR in RF frequency band is proposed in this work. The measured parasitic capacitances well agree with the simulated capacitances. With the proposed small-signal model, on-chip ESD protection can be co-designed with RF circuits to eliminate the negative impacts caused by ESD protection SCR on RF performances.

AB - Silicon-controlled rectifier (SCR) has been reported with the good electrostatic discharge (ESD) robustness under the lower parasitic capacitance among ESD devices in CMOS technology. To correctly predict the performances of SCR-based ESD-protected RF circuit, it is essential for RF circuit design with accurate model of SCR device. The small-signal model of SCR in RF frequency band is proposed in this work. The measured parasitic capacitances well agree with the simulated capacitances. With the proposed small-signal model, on-chip ESD protection can be co-designed with RF circuits to eliminate the negative impacts caused by ESD protection SCR on RF performances.

KW - Electrostatic discharges (ESD)

KW - Low-capacitance (low-C)

KW - Modeling

KW - Radio-frequency (RF)

KW - Silicon-controlled rectifier (SCR)

UR - http://www.scopus.com/inward/record.url?scp=78751473821&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78751473821&partnerID=8YFLogxK

U2 - 10.1109/ISNE.2010.5669189

DO - 10.1109/ISNE.2010.5669189

M3 - Conference contribution

AN - SCOPUS:78751473821

SN - 9781424466948

SP - 104

EP - 107

BT - 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program

ER -