Modeling and correlation of gate oxide QBD between exponential current ramp and constant current stresses

Chuan H. Liu; Tun Jen Cheng; Mu Chun Wang; S. H. Yang; K. Y. Fu

Modeling and correlation of gate oxide Q_BD between exponential current ramp and constant current stresses

Chuan H. Liu^*, Tun Jen Cheng, Mu Chun Wang, S. H. Yang, K. Y. Fu

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

A simple model and conversion scheme is proposed to correlate Q_BD measured through exponential current ramp stress (ECR) and constant current stress (CCS). Although Q_BD measured via ECR depends on holding time (a power-law dependence) and so does CCS on current density (also a power-law dependence), results from either test at any stress condition can be easily converted to the other with stress condition specified. Experiments with 35angstrom to 135 angstrom oxides demonstrate the capability of the proposed method.

Original language	English
Pages (from-to)	94-95
Number of pages	2
Journal	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan Duration: 1999 Jun 7 → 1999 Jun 10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

@article{60fcd217fd6740c9869a2d5b425de459,

title = "Modeling and correlation of gate oxide QBD between exponential current ramp and constant current stresses",

abstract = "A simple model and conversion scheme is proposed to correlate QBD measured through exponential current ramp stress (ECR) and constant current stress (CCS). Although QBD measured via ECR depends on holding time (a power-law dependence) and so does CCS on current density (also a power-law dependence), results from either test at any stress condition can be easily converted to the other with stress condition specified. Experiments with 35angstrom to 135 angstrom oxides demonstrate the capability of the proposed method.",

author = "Liu, {Chuan H.} and Cheng, {Tun Jen} and Wang, {Mu Chun} and Yang, {S. H.} and Fu, {K. Y.}",

year = "1999",

language = "English",

pages = "94--95",

journal = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

issn = "1524-766X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications ; Conference date: 07-06-1999 Through 10-06-1999",

}

TY - JOUR

T1 - Modeling and correlation of gate oxide QBD between exponential current ramp and constant current stresses

AU - Liu, Chuan H.

AU - Cheng, Tun Jen

AU - Wang, Mu Chun

AU - Yang, S. H.

AU - Fu, K. Y.

PY - 1999

Y1 - 1999

N2 - A simple model and conversion scheme is proposed to correlate QBD measured through exponential current ramp stress (ECR) and constant current stress (CCS). Although QBD measured via ECR depends on holding time (a power-law dependence) and so does CCS on current density (also a power-law dependence), results from either test at any stress condition can be easily converted to the other with stress condition specified. Experiments with 35angstrom to 135 angstrom oxides demonstrate the capability of the proposed method.

AB - A simple model and conversion scheme is proposed to correlate QBD measured through exponential current ramp stress (ECR) and constant current stress (CCS). Although QBD measured via ECR depends on holding time (a power-law dependence) and so does CCS on current density (also a power-law dependence), results from either test at any stress condition can be easily converted to the other with stress condition specified. Experiments with 35angstrom to 135 angstrom oxides demonstrate the capability of the proposed method.

UR - http://www.scopus.com/inward/record.url?scp=0032599252&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032599252&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032599252

SN - 1524-766X

SP - 94

EP - 95

JO - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

JF - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

T2 - Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications

Y2 - 7 June 1999 through 10 June 1999

ER -

Modeling and correlation of gate oxide Q_BD between exponential current ramp and constant current stresses

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this