Modeling and correlation of gate oxide QBD between exponential current ramp and constant current stresses

Chuan-Hsi Liu, Tun Jen Cheng, Mu Chun Wang, S. H. Yang, K. Y. Fu

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

A simple model and conversion scheme is proposed to correlate QBD measured through exponential current ramp stress (ECR) and constant current stress (CCS). Although QBD measured via ECR depends on holding time (a power-law dependence) and so does CCS on current density (also a power-law dependence), results from either test at any stress condition can be easily converted to the other with stress condition specified. Experiments with 35angstrom to 135 angstrom oxides demonstrate the capability of the proposed method.

Original languageEnglish
Pages (from-to)94-95
Number of pages2
JournalInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Publication statusPublished - 1999 Jan 1
EventProceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan
Duration: 1999 Jun 71999 Jun 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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