@inproceedings{8bb3eb3285c744fb98fac01f138f4a54,
title = "Modeling and Characterization of Ferroelectric HZO considering Imprint Mechanisms",
abstract = "We have conducted modeling and characterization for FE HZO considering imprint mechanisms. We have incorporated the imprint effect into a nucleation-limited-switching (NLS) model. Our model has been compared with experimental data. Our study reveals that the imprint effect for FE HZO with 8 nm thickness is weaker than that of 10 nm.",
author = "Tsai, \{Hau Ting\} and Liu, \{Guan Lin\} and Cheng, \{Che Chi\} and Lee, \{Min Hung\} and Pin Su",
note = "Publisher Copyright: {\textcopyright} 2026 IEEE.; 2026 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2026 ; Conference date: 13-04-2026 Through 17-04-2026",
year = "2026",
doi = "10.1109/VLSITSA69131.2026.11527573",
language = "English",
series = "2026 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2026 - Proceedings of Technical Papers",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2026 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2026 - Proceedings of Technical Papers",
}