Miniature fully-integrated 2.5 and 3.5 GHz LDMOS power amplifiers in 40-nm CMOS technology

Ming Hang Wu; Tien Tzu Chang; Jen Hao Cheng; Tian Wei Huang; Jeng Han Tsai

doi:10.1109/EuMIC.2016.7777576

Miniature fully-integrated 2.5 and 3.5 GHz LDMOS power amplifiers in 40-nm CMOS technology

Ming Hang Wu, Tien Tzu Chang, Jen Hao Cheng, Tian Wei Huang, Jeng Han Tsai

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

This paper presents two miniature fully-integrated CMOS-compatible laterally diffused metal oxide semiconductor (LDMOS) power amplifiers (PAs) in 40-nm CMOS process. Due to the high breakdown voltage characteristic, LDMOS provides superior power density than modern standard CMOS transistor. The capacitive neutralization technique is adopted to improve stability of LDMOS transistor while enhancing the maximum available gain. For low-cost miniaturization, the transformers are utilized in the proposed PAs. Also, efficient power combining and impedance transformation can be realized. The LDMOS PAs achieve saturated output power (Psat) of 26.7 and 26.5 dBm and measured OP1dB of 24.24 and 24.1 dBm at 2.5 and 3.5 GHz, respectively. With compact chip size of 0.318 mm² and 0.259 mm², two PAs demonstrate the highest Psat power area density (PAD) of 1467 mW/mm² and 1724 mW/mm² at 2.5 and 3.5 GHz among recently reported CMOS PAs.

Original language	English
Title of host publication	EuMIC 2016 - 11th European Microwave Integrated Circuits Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	401-404
Number of pages	4
ISBN (Electronic)	9782874870446
DOIs	https://doi.org/10.1109/EuMIC.2016.7777576
Publication status	Published - 2016 Dec 7
Event	11th European Microwave Integrated Circuits Conference, EuMIC 2016 - London, United Kingdom Duration: 2016 Oct 3 → 2016 Oct 4

Publication series

Name	EuMIC 2016 - 11th European Microwave Integrated Circuits Conference

Other

Other	11th European Microwave Integrated Circuits Conference, EuMIC 2016
Country/Territory	United Kingdom
City	London
Period	2016/10/03 → 2016/10/04

Keywords

CMOS
LDMOS
Power amplifiers
transformer

ASJC Scopus subject areas

Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/EuMIC.2016.7777576

Cite this

Wu, M. H., Chang, T. T., Cheng, J. H., Huang, T. W., & Tsai, J. H. (2016). Miniature fully-integrated 2.5 and 3.5 GHz LDMOS power amplifiers in 40-nm CMOS technology. In EuMIC 2016 - 11th European Microwave Integrated Circuits Conference (pp. 401-404). Article 7777576 (EuMIC 2016 - 11th European Microwave Integrated Circuits Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuMIC.2016.7777576

Miniature fully-integrated 2.5 and 3.5 GHz LDMOS power amplifiers in 40-nm CMOS technology. / Wu, Ming Hang; Chang, Tien Tzu; Cheng, Jen Hao et al.
EuMIC 2016 - 11th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2016. p. 401-404 7777576 (EuMIC 2016 - 11th European Microwave Integrated Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wu, MH, Chang, TT, Cheng, JH, Huang, TW & Tsai, JH 2016, Miniature fully-integrated 2.5 and 3.5 GHz LDMOS power amplifiers in 40-nm CMOS technology. in EuMIC 2016 - 11th European Microwave Integrated Circuits Conference., 7777576, EuMIC 2016 - 11th European Microwave Integrated Circuits Conference, Institute of Electrical and Electronics Engineers Inc., pp. 401-404, 11th European Microwave Integrated Circuits Conference, EuMIC 2016, London, United Kingdom, 2016/10/03. https://doi.org/10.1109/EuMIC.2016.7777576

Wu MH, Chang TT, Cheng JH, Huang TW, Tsai JH. Miniature fully-integrated 2.5 and 3.5 GHz LDMOS power amplifiers in 40-nm CMOS technology. In EuMIC 2016 - 11th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc. 2016. p. 401-404. 7777576. (EuMIC 2016 - 11th European Microwave Integrated Circuits Conference). doi: 10.1109/EuMIC.2016.7777576

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title = "Miniature fully-integrated 2.5 and 3.5 GHz LDMOS power amplifiers in 40-nm CMOS technology",

abstract = "This paper presents two miniature fully-integrated CMOS-compatible laterally diffused metal oxide semiconductor (LDMOS) power amplifiers (PAs) in 40-nm CMOS process. Due to the high breakdown voltage characteristic, LDMOS provides superior power density than modern standard CMOS transistor. The capacitive neutralization technique is adopted to improve stability of LDMOS transistor while enhancing the maximum available gain. For low-cost miniaturization, the transformers are utilized in the proposed PAs. Also, efficient power combining and impedance transformation can be realized. The LDMOS PAs achieve saturated output power (Psat) of 26.7 and 26.5 dBm and measured OP1dB of 24.24 and 24.1 dBm at 2.5 and 3.5 GHz, respectively. With compact chip size of 0.318 mm2 and 0.259 mm2, two PAs demonstrate the highest Psat power area density (PAD) of 1467 mW/mm2 and 1724 mW/mm2 at 2.5 and 3.5 GHz among recently reported CMOS PAs.",

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PY - 2016/12/7

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N2 - This paper presents two miniature fully-integrated CMOS-compatible laterally diffused metal oxide semiconductor (LDMOS) power amplifiers (PAs) in 40-nm CMOS process. Due to the high breakdown voltage characteristic, LDMOS provides superior power density than modern standard CMOS transistor. The capacitive neutralization technique is adopted to improve stability of LDMOS transistor while enhancing the maximum available gain. For low-cost miniaturization, the transformers are utilized in the proposed PAs. Also, efficient power combining and impedance transformation can be realized. The LDMOS PAs achieve saturated output power (Psat) of 26.7 and 26.5 dBm and measured OP1dB of 24.24 and 24.1 dBm at 2.5 and 3.5 GHz, respectively. With compact chip size of 0.318 mm2 and 0.259 mm2, two PAs demonstrate the highest Psat power area density (PAD) of 1467 mW/mm2 and 1724 mW/mm2 at 2.5 and 3.5 GHz among recently reported CMOS PAs.

AB - This paper presents two miniature fully-integrated CMOS-compatible laterally diffused metal oxide semiconductor (LDMOS) power amplifiers (PAs) in 40-nm CMOS process. Due to the high breakdown voltage characteristic, LDMOS provides superior power density than modern standard CMOS transistor. The capacitive neutralization technique is adopted to improve stability of LDMOS transistor while enhancing the maximum available gain. For low-cost miniaturization, the transformers are utilized in the proposed PAs. Also, efficient power combining and impedance transformation can be realized. The LDMOS PAs achieve saturated output power (Psat) of 26.7 and 26.5 dBm and measured OP1dB of 24.24 and 24.1 dBm at 2.5 and 3.5 GHz, respectively. With compact chip size of 0.318 mm2 and 0.259 mm2, two PAs demonstrate the highest Psat power area density (PAD) of 1467 mW/mm2 and 1724 mW/mm2 at 2.5 and 3.5 GHz among recently reported CMOS PAs.

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Miniature fully-integrated 2.5 and 3.5 GHz LDMOS power amplifiers in 40-nm CMOS technology

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Keywords

ASJC Scopus subject areas

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