Miniature fully-integrated 2.5 and 3.5 GHz LDMOS power amplifiers in 40-nm CMOS technology

Ming Hang Wu, Tien Tzu Chang, Jen Hao Cheng, Tian Wei Huang, Jeng-Han Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents two miniature fully-integrated CMOS-compatible laterally diffused metal oxide semiconductor (LDMOS) power amplifiers (PAs) in 40-nm CMOS process. Due to the high breakdown voltage characteristic, LDMOS provides superior power density than modern standard CMOS transistor. The capacitive neutralization technique is adopted to improve stability of LDMOS transistor while enhancing the maximum available gain. For low-cost miniaturization, the transformers are utilized in the proposed PAs. Also, efficient power combining and impedance transformation can be realized. The LDMOS PAs achieve saturated output power (Psat) of 26.7 and 26.5 dBm and measured OP1dB of 24.24 and 24.1 dBm at 2.5 and 3.5 GHz, respectively. With compact chip size of 0.318 mm2 and 0.259 mm2, two PAs demonstrate the highest Psat power area density (PAD) of 1467 mW/mm2 and 1724 mW/mm2 at 2.5 and 3.5 GHz among recently reported CMOS PAs.

Original languageEnglish
Title of host publicationEuMIC 2016 - 11th European Microwave Integrated Circuits Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages401-404
Number of pages4
ISBN (Electronic)9782874870446
DOIs
Publication statusPublished - 2016 Dec 7
Event11th European Microwave Integrated Circuits Conference, EuMIC 2016 - London, United Kingdom
Duration: 2016 Oct 32016 Oct 4

Other

Other11th European Microwave Integrated Circuits Conference, EuMIC 2016
CountryUnited Kingdom
CityLondon
Period16/10/316/10/4

Fingerprint

power amplifiers
Power amplifiers
metal oxide semiconductors
CMOS
Metals
Transistors
transistors
miniaturization
Electric breakdown
electrical faults
transformers
radiant flux density
chips
Oxide semiconductors
impedance
output
Costs

Keywords

  • CMOS
  • LDMOS
  • Power amplifiers
  • transformer

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation

Cite this

Wu, M. H., Chang, T. T., Cheng, J. H., Huang, T. W., & Tsai, J-H. (2016). Miniature fully-integrated 2.5 and 3.5 GHz LDMOS power amplifiers in 40-nm CMOS technology. In EuMIC 2016 - 11th European Microwave Integrated Circuits Conference (pp. 401-404). [7777576] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuMIC.2016.7777576

Miniature fully-integrated 2.5 and 3.5 GHz LDMOS power amplifiers in 40-nm CMOS technology. / Wu, Ming Hang; Chang, Tien Tzu; Cheng, Jen Hao; Huang, Tian Wei; Tsai, Jeng-Han.

EuMIC 2016 - 11th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2016. p. 401-404 7777576.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wu, MH, Chang, TT, Cheng, JH, Huang, TW & Tsai, J-H 2016, Miniature fully-integrated 2.5 and 3.5 GHz LDMOS power amplifiers in 40-nm CMOS technology. in EuMIC 2016 - 11th European Microwave Integrated Circuits Conference., 7777576, Institute of Electrical and Electronics Engineers Inc., pp. 401-404, 11th European Microwave Integrated Circuits Conference, EuMIC 2016, London, United Kingdom, 16/10/3. https://doi.org/10.1109/EuMIC.2016.7777576
Wu MH, Chang TT, Cheng JH, Huang TW, Tsai J-H. Miniature fully-integrated 2.5 and 3.5 GHz LDMOS power amplifiers in 40-nm CMOS technology. In EuMIC 2016 - 11th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc. 2016. p. 401-404. 7777576 https://doi.org/10.1109/EuMIC.2016.7777576
Wu, Ming Hang ; Chang, Tien Tzu ; Cheng, Jen Hao ; Huang, Tian Wei ; Tsai, Jeng-Han. / Miniature fully-integrated 2.5 and 3.5 GHz LDMOS power amplifiers in 40-nm CMOS technology. EuMIC 2016 - 11th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 401-404
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