Micro-Raman spectroscopy of a single freestanding GaN nanorod grown by molecular beam epitaxy

Ching Lien Hsiao, Li Wei Tu, Tung Wei Chi, Min Chen, Tai Fa Young, Chih Ta Chia, Yu Ming Chang

Research output: Contribution to journalArticle

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Abstract

Micro-Raman spectra were measured on a single freestanding GaN nanorod, which was grown by molecular beam epitaxy. A sharp linewidth of E2 (high) mode of 2.1 cm-1 measured in the x (y,y) x- configuration indicates the high crystalline quality of the nanorod. The angle-dependent Raman spectroscopy shows that the integrated intensities of these first-order Raman modes follow the theoretical sinusoidal functions. The forbidden E1 (LO) mode that appeared in the x (z,z) x- scattering configurations is assigned to the quasi-LO phonon mode. Power-dependent Raman spectroscopy shows redshift with increasing laser power density due to sample heating which is confirmed by Stokes and anti-Stokes measurements. The broadband centered at 708.5 cm-1 is ascribed to the surface mode of the nanostructure.

Original languageEnglish
Article number043102
JournalApplied Physics Letters
Volume90
Issue number4
DOIs
Publication statusPublished - 2007 Feb 5

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nanorods
molecular beam epitaxy
Raman spectroscopy
configurations
radiant flux density
Raman spectra
broadband
heating
scattering
lasers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Micro-Raman spectroscopy of a single freestanding GaN nanorod grown by molecular beam epitaxy. / Hsiao, Ching Lien; Tu, Li Wei; Chi, Tung Wei; Chen, Min; Young, Tai Fa; Chia, Chih Ta; Chang, Yu Ming.

In: Applied Physics Letters, Vol. 90, No. 4, 043102, 05.02.2007.

Research output: Contribution to journalArticle

Hsiao, Ching Lien ; Tu, Li Wei ; Chi, Tung Wei ; Chen, Min ; Young, Tai Fa ; Chia, Chih Ta ; Chang, Yu Ming. / Micro-Raman spectroscopy of a single freestanding GaN nanorod grown by molecular beam epitaxy. In: Applied Physics Letters. 2007 ; Vol. 90, No. 4.
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