Metal gate/High-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate

Chia Ching Yeo, M. H. Lee, C. W. Liu, K. J. Choi, T. W. Lee, B. J. Cho

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Metal gate/High-K slack CMOSFETs on ultra thin Ge epi channel on relaxed Si, capped with ultra thin Si (Si/Ge/Si substrate) were evaluated. NMOSFET shows enhanced mobility at low field while pMOSFET shows degraded peak mobility, with enhancement observed only at high field.

    Original languageEnglish
    Title of host publication2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages107-110
    Number of pages4
    ISBN (Print)0780393392, 9780780393394
    DOIs
    Publication statusPublished - 2005 Jan 1
    Event2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
    Duration: 2005 Dec 192005 Dec 21

    Publication series

    Name2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

    Other

    Other2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
    CountryHong Kong
    CityHowloon
    Period05/12/1905/12/21

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

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