Metal-gate/high-κ CMOS scaling from Si to Ge at small EOT

Albert Chin, W. B. Chen, B. S. Shie, K. C. Hsu, P. C. Chen, C. H. Cheng, C. C. Chi, Y. H. Wu, K. S. Chaing-Liaoc, S. J. Wang, C. H. Kuan, F. S. Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Continuously down-scaling EOT and improving mobility are required for CMOS device. Small 0.6∼1 nm EOT and low Vt of ∼0.15 V are achieved in CMOS by using higher κ gate dielectric and novel process. The ultimate EOT scaling is limited by the inserted ultra-thin SiON interfacial layer in high-κ/Si to reduce the mobility degradation. Further mobility improvement is obtained by using Ge channel MOSFET that has 2.5X better high-field hole effective mobility than the SiO2/Si universal mobility at an E eff of 1 MV/cm.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages836-839
Number of pages4
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 2010 Nov 12010 Nov 4

Publication series

NameICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period10/11/110/11/4

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Chin, A., Chen, W. B., Shie, B. S., Hsu, K. C., Chen, P. C., Cheng, C. H., Chi, C. C., Wu, Y. H., Chaing-Liaoc, K. S., Wang, S. J., Kuan, C. H., & Yeh, F. S. (2010). Metal-gate/high-κ CMOS scaling from Si to Ge at small EOT. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 836-839). [5667443] (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667443