TY - GEN
T1 - Metadiffuser fabricated by DUV KrF 248nm photolithography for wavefront manipulation
AU - Liu, Hsuehli
AU - Chou, Chunyen
AU - Huang, Linchia
AU - Guo, Wilson
AU - Yu, Peichen
AU - Huang, Chunghsuan
AU - Cheng, Chaujern
N1 - Publisher Copyright:
© 2023 SPIE.
PY - 2023
Y1 - 2023
N2 - This work presents a disordered metadiffuser that can achieve a uniform angular scattering distribution with a numerical aperture (NA) of 0.85 at a working wavelength of λ=532 nm, as demonstrated through simulations using the Gerchberg-Saxton algorithm. Additionally, we demonstrate the capability of the metadiffuser to achieve near diffraction-limit high NA focusing (NA>0.8) through the use of a spatial light modulator and the optical phase conjugation method for wavefront shaping. Finally, we propose a deep ultraviolet (DUV) model-based optical proximity correction (OPC) system that uses optical and photoresist simulations via Hopkins’s partially coherent image formation and fully convolutional networks (FCN). This system enables larger-area device fabrication with DUV lithography while maintaining precise critical dimension (CD) of meta atoms. The proposed OPC system achieves a lithography accuracy with an average ∆CD/CD of 0.235%. These results offer promising implications for the practical application of metadiffusers and the DUV lithography technique in the field of optical devices.
AB - This work presents a disordered metadiffuser that can achieve a uniform angular scattering distribution with a numerical aperture (NA) of 0.85 at a working wavelength of λ=532 nm, as demonstrated through simulations using the Gerchberg-Saxton algorithm. Additionally, we demonstrate the capability of the metadiffuser to achieve near diffraction-limit high NA focusing (NA>0.8) through the use of a spatial light modulator and the optical phase conjugation method for wavefront shaping. Finally, we propose a deep ultraviolet (DUV) model-based optical proximity correction (OPC) system that uses optical and photoresist simulations via Hopkins’s partially coherent image formation and fully convolutional networks (FCN). This system enables larger-area device fabrication with DUV lithography while maintaining precise critical dimension (CD) of meta atoms. The proposed OPC system achieves a lithography accuracy with an average ∆CD/CD of 0.235%. These results offer promising implications for the practical application of metadiffusers and the DUV lithography technique in the field of optical devices.
KW - Critical dimension (CD)
KW - DUV photolithography
KW - Fully convolutional network (FCN)
KW - Gerchberg-Saxton algorithm
KW - Optical phase conjugation
KW - Optical proximity correction (OPC)
KW - Wavefront shaping
KW - lithographic model
UR - http://www.scopus.com/inward/record.url?scp=85176000983&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85176000983&partnerID=8YFLogxK
U2 - 10.1117/12.2677996
DO - 10.1117/12.2677996
M3 - Conference contribution
AN - SCOPUS:85176000983
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Metamaterials, Metadevices, and Metasystems 2023
A2 - Engheta, Nader
A2 - Noginov, Mikhail A.
A2 - Zheludev, Nikolay I.
A2 - Zheludev, Nikolay I.
PB - SPIE
T2 - Metamaterials, Metadevices, and Metasystems 2023
Y2 - 20 August 2023 through 23 August 2023
ER -