Memtransistor-like operation of devices made by graphene/h-BN/MoS2 van der Waals heterostructure

Shih Po Chien, Bor Wei Liang, Wen Hao Chang, Bo Wen Wang, Yi Jie Feng, Yi Cheng Chen, Yann Wen Lan*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We present the fabrication and characterization of a flash memory device based on a van der Waals (vdW) heterostructure comprising graphene (Gr), hexagonal boron nitride (h-BN), and molybdenum disulfide (MoS2). The device exhibits versatile functionalities and demonstrates memtransistor-like behavior, making it a promising candidate for synaptic devices and neuromorphic computing. The Gr/h-BN/MoS2 heterostructure allows for the manipulation of charge concentration in the floating gate (FG) through control gate voltage (VBG), resulting in conductance switching. Moreover, the overlap structure of the FG and source-drain electrodes enables memtransistor-like operations, where the writing processes rely on the source-drain voltage (VDS). By varying carrier storage concentrations in the Gr-FG, multiple memory states can be achieved, offering analog information processing capabilities. In addition, the combination of dual-input functionality allows for the identification of a substantial on/off ratio even when utilizing a lower reading VDS, consequently strengthening the dependability of the memory state. Our work showcases the great potential of the Gr/h-BN/MoS2 heterostructure for advanced nanoelectronics, providing a platform for the development of computing architectures and neuromorphic systems.

Original languageEnglish
Article number142107
JournalApplied Physics Letters
Volume123
Issue number14
DOIs
Publication statusPublished - 2023 Oct 2

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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