Mechanism of threshold voltage shift (Δ Vth) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs

Chuan Hsi Liu; Ming T. Lee; Chih Yung Lin; Jenkon Chen; Y. T. Loh; Fu Tai Liou; Klaus Schruefer; Anastasios A. Katsetos; Zhijian Yang; Nivo Rovedo; Terence B. Hook; Clement Wann; Tze Chiang Chen

doi:10.1143/jjap.41.2423

Mechanism of threshold voltage shift (Δ V_th) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs

Chuan Hsi Liu^*, Ming T. Lee, Chih Yung Lin, Jenkon Chen, Y. T. Loh, Fu Tai Liou, Klaus Schruefer, Anastasios A. Katsetos, Zhijian Yang, Nivo Rovedo, Terence B. Hook, Clement Wann, Tze Chiang Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

The physical mechanism responsible for negative bias temperature instability (NBTI), which is basic to the minimization of this degradation mode, is investigated, and an analytical model is developed accordingly. Experiments with 1.7 nm to 3.3 nm gate dielectrics fabricated by different processes demonstrate the capability of the proposed model.

Original language	English
Pages (from-to)	2423-2425
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.41.2423
Publication status	Published - 2002 Apr
Externally published	Yes

Keywords

Device physics
Gate oxide reliability
NBTI

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/jjap.41.2423

Cite this

Liu, C. H., Lee, M. T., Lin, C. Y., Chen, J., Loh, Y. T., Liou, F. T., Schruefer, K., Katsetos, A. A., Yang, Z., Rovedo, N., Hook, T. B., Wann, C., & Chen, T. C. (2002). Mechanism of threshold voltage shift (Δ V_th) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 41(4 B), 2423-2425. https://doi.org/10.1143/jjap.41.2423

Mechanism of threshold voltage shift (Δ V_th) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs. / Liu, Chuan Hsi; Lee, Ming T.; Lin, Chih Yung et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 4 B, 04.2002, p. 2423-2425.

Research output: Contribution to journal › Article › peer-review

Liu, CH, Lee, MT, Lin, CY, Chen, J, Loh, YT, Liou, FT, Schruefer, K, Katsetos, AA, Yang, Z, Rovedo, N, Hook, TB, Wann, C & Chen, TC 2002, 'Mechanism of threshold voltage shift (Δ V_th) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 41, no. 4 B, pp. 2423-2425. https://doi.org/10.1143/jjap.41.2423

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