Mechanism of threshold voltage shift (Δ V th ) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs

Chuan-Hsi Liu, Ming T. Lee, Chih Yung Lin, Jenkon Chen, Y. T. Loh, Fu Tai Liou, Klaus Schruefer, Anastasios A. Katsetos, Zhijian Yang, Nivo Rovedo, Terence B. Hook, Clement Wann, Tze Chiang Chen

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

The physical mechanism responsible for negative bias temperature instability (NBTI), which is basic to the minimization of this degradation mode, is investigated, and an analytical model is developed accordingly. Experiments with 1.7 nm to 3.3 nm gate dielectrics fabricated by different processes demonstrate the capability of the proposed model.

Original languageEnglish
Pages (from-to)2423-2425
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number4 B
DOIs
Publication statusPublished - 2002 Apr 1

Fingerprint

Gate dielectrics
Threshold voltage
threshold voltage
Analytical models
Degradation
shift
Experiments
degradation
optimization
temperature
Negative bias temperature instability

Keywords

  • Device physics
  • Gate oxide reliability
  • NBTI

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Mechanism of threshold voltage shift (Δ V th ) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs . / Liu, Chuan-Hsi; Lee, Ming T.; Lin, Chih Yung; Chen, Jenkon; Loh, Y. T.; Liou, Fu Tai; Schruefer, Klaus; Katsetos, Anastasios A.; Yang, Zhijian; Rovedo, Nivo; Hook, Terence B.; Wann, Clement; Chen, Tze Chiang.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 4 B, 01.04.2002, p. 2423-2425.

Research output: Contribution to journalArticle

Liu, Chuan-Hsi ; Lee, Ming T. ; Lin, Chih Yung ; Chen, Jenkon ; Loh, Y. T. ; Liou, Fu Tai ; Schruefer, Klaus ; Katsetos, Anastasios A. ; Yang, Zhijian ; Rovedo, Nivo ; Hook, Terence B. ; Wann, Clement ; Chen, Tze Chiang. / Mechanism of threshold voltage shift (Δ V th ) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2002 ; Vol. 41, No. 4 B. pp. 2423-2425.
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