Mechanism of threshold voltage shift (Δ Vth) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs

Chuan Hsi Liu*, Ming T. Lee, Chih Yung Lin, Jenkon Chen, Y. T. Loh, Fu Tai Liou, Klaus Schruefer, Anastasios A. Katsetos, Zhijian Yang, Nivo Rovedo, Terence B. Hook, Clement Wann, Tze Chiang Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

51 Citations (Scopus)


The physical mechanism responsible for negative bias temperature instability (NBTI), which is basic to the minimization of this degradation mode, is investigated, and an analytical model is developed accordingly. Experiments with 1.7 nm to 3.3 nm gate dielectrics fabricated by different processes demonstrate the capability of the proposed model.

Original languageEnglish
Pages (from-to)2423-2425
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
Publication statusPublished - 2002 Apr


  • Device physics
  • Gate oxide reliability
  • NBTI

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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