Mechanism of GeO 2 resistive switching based on the multi-phonon assisted tunneling between traps

A. V. Shaposhnikov; T. V. Perevalov; V. A. Gritsenko; C. H. Cheng; A. Chin

doi:10.1063/1.4729589

Mechanism of GeO ₂ resistive switching based on the multi-phonon assisted tunneling between traps

A. V. Shaposhnikov, T. V. Perevalov, V. A. Gritsenko^*, C. H. Cheng, A. Chin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

66 Citations (Scopus)

Abstract

Model of evenly distributed traps in bulk dielectric is proposed for the resistive memory switching mechanism. Switching from high resistance to the low resistance state is explained by several-fold increase in trap concentration after the application of switching voltage. Both high and low resistance conductivities are governed by multi-phonon ionization and tunneling between neighboring traps. Thermal trap energy for oxygen vacancy and electron effective mass for crystal α-GeO ₂ were calculated using density functional theory and used for the fitting of our charge transport model of resistive memory. The model was verified on the TaN-GeO ₂-Ni structure with good semi-quantitative agreement with experiment.

Original language	English
Article number	243506
Journal	Applied Physics Letters
Volume	100
Issue number	24
DOIs	https://doi.org/10.1063/1.4729589
Publication status	Published - 2012 Jun 11
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4729589

Cite this

@article{fce8bfb7d58243249f070058b55eb3fd,

title = "Mechanism of GeO 2 resistive switching based on the multi-phonon assisted tunneling between traps",

abstract = "Model of evenly distributed traps in bulk dielectric is proposed for the resistive memory switching mechanism. Switching from high resistance to the low resistance state is explained by several-fold increase in trap concentration after the application of switching voltage. Both high and low resistance conductivities are governed by multi-phonon ionization and tunneling between neighboring traps. Thermal trap energy for oxygen vacancy and electron effective mass for crystal α-GeO 2 were calculated using density functional theory and used for the fitting of our charge transport model of resistive memory. The model was verified on the TaN-GeO 2-Ni structure with good semi-quantitative agreement with experiment.",

author = "Shaposhnikov, {A. V.} and Perevalov, {T. V.} and Gritsenko, {V. A.} and Cheng, {C. H.} and A. Chin",

note = "Funding Information: This work was supported by the grant No. 24.18 of Russian Academy of Sciences, grant No. 5.12 of Siberian Branch of Russian Academy of Sciences and the National Science Council, Taiwan, under Grant No. NSC-100-2923-E-009-001-MY3. The computations were conducted at the Novosibirsk State University Supercomputer Center.",

year = "2012",

month = jun,

day = "11",

doi = "10.1063/1.4729589",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Mechanism of GeO 2 resistive switching based on the multi-phonon assisted tunneling between traps

AU - Shaposhnikov, A. V.

AU - Perevalov, T. V.

AU - Gritsenko, V. A.

AU - Cheng, C. H.

AU - Chin, A.

N1 - Funding Information: This work was supported by the grant No. 24.18 of Russian Academy of Sciences, grant No. 5.12 of Siberian Branch of Russian Academy of Sciences and the National Science Council, Taiwan, under Grant No. NSC-100-2923-E-009-001-MY3. The computations were conducted at the Novosibirsk State University Supercomputer Center.

PY - 2012/6/11

Y1 - 2012/6/11

N2 - Model of evenly distributed traps in bulk dielectric is proposed for the resistive memory switching mechanism. Switching from high resistance to the low resistance state is explained by several-fold increase in trap concentration after the application of switching voltage. Both high and low resistance conductivities are governed by multi-phonon ionization and tunneling between neighboring traps. Thermal trap energy for oxygen vacancy and electron effective mass for crystal α-GeO 2 were calculated using density functional theory and used for the fitting of our charge transport model of resistive memory. The model was verified on the TaN-GeO 2-Ni structure with good semi-quantitative agreement with experiment.

AB - Model of evenly distributed traps in bulk dielectric is proposed for the resistive memory switching mechanism. Switching from high resistance to the low resistance state is explained by several-fold increase in trap concentration after the application of switching voltage. Both high and low resistance conductivities are governed by multi-phonon ionization and tunneling between neighboring traps. Thermal trap energy for oxygen vacancy and electron effective mass for crystal α-GeO 2 were calculated using density functional theory and used for the fitting of our charge transport model of resistive memory. The model was verified on the TaN-GeO 2-Ni structure with good semi-quantitative agreement with experiment.

UR - http://www.scopus.com/inward/record.url?scp=84863326064&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863326064&partnerID=8YFLogxK

U2 - 10.1063/1.4729589

DO - 10.1063/1.4729589

M3 - Article

AN - SCOPUS:84863326064

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 243506

ER -

Mechanism of GeO ₂ resistive switching based on the multi-phonon assisted tunneling between traps

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this