Mechanism of GeO 2 resistive switching based on the multi-phonon assisted tunneling between traps

A. V. Shaposhnikov, T. V. Perevalov, V. A. Gritsenko, C. H. Cheng, A. Chin

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Abstract

Model of evenly distributed traps in bulk dielectric is proposed for the resistive memory switching mechanism. Switching from high resistance to the low resistance state is explained by several-fold increase in trap concentration after the application of switching voltage. Both high and low resistance conductivities are governed by multi-phonon ionization and tunneling between neighboring traps. Thermal trap energy for oxygen vacancy and electron effective mass for crystal α-GeO 2 were calculated using density functional theory and used for the fitting of our charge transport model of resistive memory. The model was verified on the TaN-GeO 2-Ni structure with good semi-quantitative agreement with experiment.

Original languageEnglish
Article number243506
JournalApplied Physics Letters
Volume100
Issue number24
DOIs
Publication statusPublished - 2012 Jun 11

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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