INIS
charges
50%
dielectrics
100%
dynamics
100%
field effect transistors
50%
frequency range
50%
instability
100%
metals
50%
mhz range
50%
mosfet
100%
oxides
50%
range
50%
relaxation
50%
semiconductor materials
50%
voltage
50%
Physics
Cycles
50%
Dielectrics
100%
Field Effect Transistor
100%
Frequency Ranges
50%
Metal Oxide Semiconductor
50%
Model
50%
Oxynitrides
100%
Temperature
100%
Threshold Voltage
50%
Chemistry
Dielectric Material
100%
Field Effect
50%
Metal Oxide
50%
Reaction Temperature
100%
Relaxation
50%
Semiconductor
50%
Type Metal
50%
Voltage
50%
Material Science
Dielectric Material
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Negative-Bias Temperature Instability
100%
Oxynitride
100%
Computer Science
Dynamics of Mechanism
100%
Engineering
Dynamic Condition
50%
Empirical Model
50%