Mechanism of dynamic negative bias temperature instability of p-MOSFETs with 13 å oxynitride gate dielectric

Physics & Astronomy

• oxynitrides 83%
• field effect transistors 54%
• p-type semiconductors 44%
• metal oxide semiconductors 35%
• threshold voltage 33%
• frequency ranges 26%
• cycles 23%
• shift 21%
• temperature 20%

Engineering & Materials Science

• Negative bias temperature instability 100%
• Gate dielectrics 99%
• MOSFET devices 40%
• Threshold voltage 38%
• Relaxation 32%

Chemical Compounds

• Field Effect 69%
• Dielectric Material 61%
• Voltage 50%