Mechanism of dynamic negative bias temperature instability of p-MOSFETs with 13 å oxynitride gate dielectric

Tung Ming Pan; Chuan Hsi Liu

doi:10.1149/1.2109287

Mechanism of dynamic negative bias temperature instability of p-MOSFETs with 13 å oxynitride gate dielectric

Tung Ming Pan^*, Chuan Hsi Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this paper, we explore the negative bias temperature instability of p-type metal-oxide-semiconductor field-effect transistors with a 1.3 nm oxynitride gate dielectric under ac dynamic conditions in the frequency range of 200 Hz to 2 MHz and the duty cycle in the range of 25 to 75%. The increase in the threshold voltage shift (ΔV_th) under ac stress is generally lower than under dc stress by a factor of two or more. An empirical model is established based on the release and relaxation/recapturing of positive charges.

Original language	English
Pages (from-to)	G348-G351
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	12
DOIs	https://doi.org/10.1149/1.2109287
Publication status	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.2109287

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@article{76524522078f4abbafefc70876de5e30,

title = "Mechanism of dynamic negative bias temperature instability of p-MOSFETs with 13 {\aa} oxynitride gate dielectric",

abstract = "In this paper, we explore the negative bias temperature instability of p-type metal-oxide-semiconductor field-effect transistors with a 1.3 nm oxynitride gate dielectric under ac dynamic conditions in the frequency range of 200 Hz to 2 MHz and the duty cycle in the range of 25 to 75%. The increase in the threshold voltage shift (ΔVth) under ac stress is generally lower than under dc stress by a factor of two or more. An empirical model is established based on the release and relaxation/recapturing of positive charges.",

author = "Pan, {Tung Ming} and Liu, {Chuan Hsi}",

year = "2005",

doi = "10.1149/1.2109287",

language = "English",

volume = "8",

pages = "G348--G351",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "12",

}

TY - JOUR

T1 - Mechanism of dynamic negative bias temperature instability of p-MOSFETs with 13 å oxynitride gate dielectric

AU - Pan, Tung Ming

AU - Liu, Chuan Hsi

PY - 2005

Y1 - 2005

N2 - In this paper, we explore the negative bias temperature instability of p-type metal-oxide-semiconductor field-effect transistors with a 1.3 nm oxynitride gate dielectric under ac dynamic conditions in the frequency range of 200 Hz to 2 MHz and the duty cycle in the range of 25 to 75%. The increase in the threshold voltage shift (ΔVth) under ac stress is generally lower than under dc stress by a factor of two or more. An empirical model is established based on the release and relaxation/recapturing of positive charges.

AB - In this paper, we explore the negative bias temperature instability of p-type metal-oxide-semiconductor field-effect transistors with a 1.3 nm oxynitride gate dielectric under ac dynamic conditions in the frequency range of 200 Hz to 2 MHz and the duty cycle in the range of 25 to 75%. The increase in the threshold voltage shift (ΔVth) under ac stress is generally lower than under dc stress by a factor of two or more. An empirical model is established based on the release and relaxation/recapturing of positive charges.

UR - http://www.scopus.com/inward/record.url?scp=28044457659&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28044457659&partnerID=8YFLogxK

U2 - 10.1149/1.2109287

DO - 10.1149/1.2109287

M3 - Article

AN - SCOPUS:28044457659

SN - 1099-0062

VL - 8

SP - G348-G351

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 12

ER -

Mechanism of dynamic negative bias temperature instability of p-MOSFETs with 13 å oxynitride gate dielectric

Abstract

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