Mechanism of dynamic negative bias temperature instability of p-MOSFETs with 13 å oxynitride gate dielectric

Tung Ming Pan, Chuan-Hsi Liu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this paper, we explore the negative bias temperature instability of p-type metal-oxide-semiconductor field-effect transistors with a 1.3 nm oxynitride gate dielectric under ac dynamic conditions in the frequency range of 200 Hz to 2 MHz and the duty cycle in the range of 25 to 75%. The increase in the threshold voltage shift (ΔVth) under ac stress is generally lower than under dc stress by a factor of two or more. An empirical model is established based on the release and relaxation/recapturing of positive charges.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume8
Issue number12
DOIs
Publication statusPublished - 2005 Dec 5

Fingerprint

oxynitrides
Gate dielectrics
field effect transistors
p-type semiconductors
MOSFET devices
Threshold voltage
metal oxide semiconductors
threshold voltage
frequency ranges
cycles
temperature
shift
Negative bias temperature instability

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

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AB - In this paper, we explore the negative bias temperature instability of p-type metal-oxide-semiconductor field-effect transistors with a 1.3 nm oxynitride gate dielectric under ac dynamic conditions in the frequency range of 200 Hz to 2 MHz and the duty cycle in the range of 25 to 75%. The increase in the threshold voltage shift (ΔVth) under ac stress is generally lower than under dc stress by a factor of two or more. An empirical model is established based on the release and relaxation/recapturing of positive charges.

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