Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

Chuan H. Liu; Ming T. Lee; Chin Yung Lin; Jenkon Chen; Klaus Schruefer; James Brighten; Nivo Rovedo; Terence B. Hook; Mukesh V. Khare; Shih Fen Huang; Clement Wann; Tze Chiang Chen; Tak H. Ning

doi:10.1109/IEDM.2001.979649

Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

Chuan H. Liu
, Ming T. Lee
, Chin Yung Lin
, Jenkon Chen
, Klaus Schruefer
, James Brighten
, Nivo Rovedo
, Terence B. Hook
, Mukesh V. Khare
, Shih Fen Huang
, Clement Wann
, Tze Chiang Chen
, Tak H. Ning

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films.

Original language	English
Pages (from-to)	861-864
Number of pages	4
Journal	Technical Digest-International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2001.979649
Publication status	Published - 2001
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2001.979649

Cite this

Liu, C. H., Lee, M. T., Lin, C. Y., Chen, J., Schruefer, K., Brighten, J., Rovedo, N., Hook, T. B., Khare, M. V., Huang, S. F., Wann, C., Chen, T. C., & Ning, T. H. (2001). Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics. Technical Digest-International Electron Devices Meeting, 861-864. https://doi.org/10.1109/IEDM.2001.979649

Liu, CH, Lee, MT, Lin, CY, Chen, J, Schruefer, K, Brighten, J, Rovedo, N, Hook, TB, Khare, MV, Huang, SF, Wann, C, Chen, TC & Ning, TH 2001, 'Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics', Technical Digest-International Electron Devices Meeting, pp. 861-864. https://doi.org/10.1109/IEDM.2001.979649

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abstract = "This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films.",

author = "Liu, \{Chuan H.\} and Lee, \{Ming T.\} and Lin, \{Chin Yung\} and Jenkon Chen and Klaus Schruefer and James Brighten and Nivo Rovedo and Hook, \{Terence B.\} and Khare, \{Mukesh V.\} and Huang, \{Shih Fen\} and Clement Wann and Chen, \{Tze Chiang\} and Ning, \{Tak H.\}",

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doi = "10.1109/IEDM.2001.979649",

language = "English",

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journal = "Technical Digest-International Electron Devices Meeting",

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AU - Chen, Jenkon

AU - Schruefer, Klaus

AU - Brighten, James

AU - Rovedo, Nivo

AU - Hook, Terence B.

AU - Khare, Mukesh V.

AU - Huang, Shih Fen

AU - Wann, Clement

AU - Chen, Tze Chiang

AU - Ning, Tak H.

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JO - Technical Digest-International Electron Devices Meeting

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Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

Abstract

ASJC Scopus subject areas

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