Abstract
This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films.
Original language | English |
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Pages (from-to) | 861-864 |
Number of pages | 4 |
Journal | Technical Digest-International Electron Devices Meeting |
DOIs | |
Publication status | Published - 2001 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry