Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

Chuan H. Liu, Ming T. Lee, Chin Yung Lin, Jenkon Chen, Klaus Schruefer, James Brighten, Nivo Rovedo, Terence B. Hook, Mukesh V. Khare, Shih Fen Huang, Clement Wann, Tze Chiang Chen, Tak H. Ning

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films.

Original languageEnglish
Pages (from-to)861-864
Number of pages4
JournalTechnical Digest-International Electron Devices Meeting
DOIs
Publication statusPublished - 2001 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Liu, C. H., Lee, M. T., Lin, C. Y., Chen, J., Schruefer, K., Brighten, J., Rovedo, N., Hook, T. B., Khare, M. V., Huang, S. F., Wann, C., Chen, T. C., & Ning, T. H. (2001). Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics. Technical Digest-International Electron Devices Meeting, 861-864. https://doi.org/10.1109/IEDM.2001.979649