Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

Chuan-Hsi Liu, Ming T. Lee, Chin Yung Lin, Jenkon Chen, Klaus Schruefer, James Brighten, Nivo Rovedo, Terence B. Hook, Mukesh V. Khare, Shih Fen Huang, Clement Wann, Tze Chiang Chen, Tak H. Ning

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films.

Original languageEnglish
Pages (from-to)861-864
Number of pages4
JournalTechnical Digest-International Electron Devices Meeting
DOIs
Publication statusPublished - 2001 Jan 1

Fingerprint

Gate dielectrics
Oxide films
oxide films
degradation
Degradation
temperature
Negative bias temperature instability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics. / Liu, Chuan-Hsi; Lee, Ming T.; Lin, Chin Yung; Chen, Jenkon; Schruefer, Klaus; Brighten, James; Rovedo, Nivo; Hook, Terence B.; Khare, Mukesh V.; Huang, Shih Fen; Wann, Clement; Chen, Tze Chiang; Ning, Tak H.

In: Technical Digest-International Electron Devices Meeting, 01.01.2001, p. 861-864.

Research output: Contribution to journalArticle

Liu, C-H, Lee, MT, Lin, CY, Chen, J, Schruefer, K, Brighten, J, Rovedo, N, Hook, TB, Khare, MV, Huang, SF, Wann, C, Chen, TC & Ning, TH 2001, 'Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics', Technical Digest-International Electron Devices Meeting, pp. 861-864. https://doi.org/10.1109/IEDM.2001.979649
Liu, Chuan-Hsi ; Lee, Ming T. ; Lin, Chin Yung ; Chen, Jenkon ; Schruefer, Klaus ; Brighten, James ; Rovedo, Nivo ; Hook, Terence B. ; Khare, Mukesh V. ; Huang, Shih Fen ; Wann, Clement ; Chen, Tze Chiang ; Ning, Tak H. / Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics. In: Technical Digest-International Electron Devices Meeting. 2001 ; pp. 861-864.
@article{122f0a41580f43e694693da0e53059cd,
title = "Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics",
abstract = "This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films.",
author = "Chuan-Hsi Liu and Lee, {Ming T.} and Lin, {Chin Yung} and Jenkon Chen and Klaus Schruefer and James Brighten and Nivo Rovedo and Hook, {Terence B.} and Khare, {Mukesh V.} and Huang, {Shih Fen} and Clement Wann and Chen, {Tze Chiang} and Ning, {Tak H.}",
year = "2001",
month = "1",
day = "1",
doi = "10.1109/IEDM.2001.979649",
language = "English",
pages = "861--864",
journal = "Technical Digest - International Electron Devices Meeting",
issn = "0163-1918",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

AU - Liu, Chuan-Hsi

AU - Lee, Ming T.

AU - Lin, Chin Yung

AU - Chen, Jenkon

AU - Schruefer, Klaus

AU - Brighten, James

AU - Rovedo, Nivo

AU - Hook, Terence B.

AU - Khare, Mukesh V.

AU - Huang, Shih Fen

AU - Wann, Clement

AU - Chen, Tze Chiang

AU - Ning, Tak H.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films.

AB - This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films.

UR - http://www.scopus.com/inward/record.url?scp=0035716697&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035716697&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2001.979649

DO - 10.1109/IEDM.2001.979649

M3 - Article

AN - SCOPUS:0035716697

SP - 861

EP - 864

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

ER -