Mechanically Strained Strained-Si NMOSFETs

S. Maikap; C. Y. Yu; S. R. Jan; M. H. Lee; C. W. Liu

doi:10.1109/LED.2003.821671

Mechanically Strained Strained-Si NMOSFETs

S. Maikap^*, C. Y. Yu, S. R. Jan, M. H. Lee, C. W. Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

The drain-current enhancement of the mechanically strained strained-Si NMOSFET device is investigated for the first time. The improvements of the drain current are found to be ∼3.4% and ∼6.5% for the strained-Si and control Si devices, respectively, with the channel length of 25 μm at the external biaxial tensile strain of 0.037%, while the drain-current enhancements are ∼2.0% and ∼4.5% for strained-Si and control Si devices, respectively, with the channel length of 0.6 μm. Beside the strain caused by lattice mismatch, the mechanical strain can further enhance the current drive of the strained-Si NMOSFET. The strain distribution due to the mechanical stress has different effect on the current enhancement depending on the strain magnitude and channel direction. The smaller current enhancement for strained-Si device as compared to the control device can be explained by the saturation of mobility enhancement at large strain.

Original language	English
Pages (from-to)	40-42
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	25
Issue number	1
DOIs	https://doi.org/10.1109/LED.2003.821671
Publication status	Published - 2004 Jan
Externally published	Yes

Keywords

Drain-current enhancement
Mechanical strain
Strained-Si nMOSFET

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2003.821671

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title = "Mechanically Strained Strained-Si NMOSFETs",

abstract = "The drain-current enhancement of the mechanically strained strained-Si NMOSFET device is investigated for the first time. The improvements of the drain current are found to be ∼3.4% and ∼6.5% for the strained-Si and control Si devices, respectively, with the channel length of 25 μm at the external biaxial tensile strain of 0.037%, while the drain-current enhancements are ∼2.0% and ∼4.5% for strained-Si and control Si devices, respectively, with the channel length of 0.6 μm. Beside the strain caused by lattice mismatch, the mechanical strain can further enhance the current drive of the strained-Si NMOSFET. The strain distribution due to the mechanical stress has different effect on the current enhancement depending on the strain magnitude and channel direction. The smaller current enhancement for strained-Si device as compared to the control device can be explained by the saturation of mobility enhancement at large strain.",

keywords = "Drain-current enhancement, Mechanical strain, Strained-Si nMOSFET",

author = "S. Maikap and Yu, {C. Y.} and Jan, {S. R.} and Lee, {M. H.} and Liu, {C. W.}",

note = "Funding Information: Manuscript received October 2, 2003. This work was supported by the National Science Council, Taiwan, R.O.C. under Contracts 91-2215-7-002-027 and 91-2120-7-00-007. The review of this letter was arranged by Editor A. Chat-terjee.",

year = "2004",

month = jan,

doi = "10.1109/LED.2003.821671",

language = "English",

volume = "25",

pages = "40--42",

journal = "IEEE Electron Device Letters",

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AU - Maikap, S.

AU - Yu, C. Y.

AU - Jan, S. R.

AU - Lee, M. H.

AU - Liu, C. W.

N1 - Funding Information: Manuscript received October 2, 2003. This work was supported by the National Science Council, Taiwan, R.O.C. under Contracts 91-2215-7-002-027 and 91-2120-7-00-007. The review of this letter was arranged by Editor A. Chat-terjee.

PY - 2004/1

Y1 - 2004/1

N2 - The drain-current enhancement of the mechanically strained strained-Si NMOSFET device is investigated for the first time. The improvements of the drain current are found to be ∼3.4% and ∼6.5% for the strained-Si and control Si devices, respectively, with the channel length of 25 μm at the external biaxial tensile strain of 0.037%, while the drain-current enhancements are ∼2.0% and ∼4.5% for strained-Si and control Si devices, respectively, with the channel length of 0.6 μm. Beside the strain caused by lattice mismatch, the mechanical strain can further enhance the current drive of the strained-Si NMOSFET. The strain distribution due to the mechanical stress has different effect on the current enhancement depending on the strain magnitude and channel direction. The smaller current enhancement for strained-Si device as compared to the control device can be explained by the saturation of mobility enhancement at large strain.

AB - The drain-current enhancement of the mechanically strained strained-Si NMOSFET device is investigated for the first time. The improvements of the drain current are found to be ∼3.4% and ∼6.5% for the strained-Si and control Si devices, respectively, with the channel length of 25 μm at the external biaxial tensile strain of 0.037%, while the drain-current enhancements are ∼2.0% and ∼4.5% for strained-Si and control Si devices, respectively, with the channel length of 0.6 μm. Beside the strain caused by lattice mismatch, the mechanical strain can further enhance the current drive of the strained-Si NMOSFET. The strain distribution due to the mechanical stress has different effect on the current enhancement depending on the strain magnitude and channel direction. The smaller current enhancement for strained-Si device as compared to the control device can be explained by the saturation of mobility enhancement at large strain.

KW - Drain-current enhancement

KW - Mechanical strain

KW - Strained-Si nMOSFET

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Mechanically Strained Strained-Si NMOSFETs

Abstract

Keywords

ASJC Scopus subject areas

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