Mechanically Strained Strained-Si NMOSFETs

S. Maikap, C. Y. Yu, S. R. Jan, M. H. Lee, C. W. Liu

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The drain-current enhancement of the mechanically strained strained-Si NMOSFET device is investigated for the first time. The improvements of the drain current are found to be ∼3.4% and ∼6.5% for the strained-Si and control Si devices, respectively, with the channel length of 25 μm at the external biaxial tensile strain of 0.037%, while the drain-current enhancements are ∼2.0% and ∼4.5% for strained-Si and control Si devices, respectively, with the channel length of 0.6 μm. Beside the strain caused by lattice mismatch, the mechanical strain can further enhance the current drive of the strained-Si NMOSFET. The strain distribution due to the mechanical stress has different effect on the current enhancement depending on the strain magnitude and channel direction. The smaller current enhancement for strained-Si device as compared to the control device can be explained by the saturation of mobility enhancement at large strain.

Original languageEnglish
Pages (from-to)40-42
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number1
DOIs
Publication statusPublished - 2004 Jan 1

Fingerprint

Drain current
Lattice mismatch
Tensile strain

Keywords

  • Drain-current enhancement
  • Mechanical strain
  • Strained-Si nMOSFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Mechanically Strained Strained-Si NMOSFETs. / Maikap, S.; Yu, C. Y.; Jan, S. R.; Lee, M. H.; Liu, C. W.

In: IEEE Electron Device Letters, Vol. 25, No. 1, 01.01.2004, p. 40-42.

Research output: Contribution to journalArticle

Maikap, S. ; Yu, C. Y. ; Jan, S. R. ; Lee, M. H. ; Liu, C. W. / Mechanically Strained Strained-Si NMOSFETs. In: IEEE Electron Device Letters. 2004 ; Vol. 25, No. 1. pp. 40-42.
@article{51e04c47bfe74ca38dab374feecd26df,
title = "Mechanically Strained Strained-Si NMOSFETs",
abstract = "The drain-current enhancement of the mechanically strained strained-Si NMOSFET device is investigated for the first time. The improvements of the drain current are found to be ∼3.4{\%} and ∼6.5{\%} for the strained-Si and control Si devices, respectively, with the channel length of 25 μm at the external biaxial tensile strain of 0.037{\%}, while the drain-current enhancements are ∼2.0{\%} and ∼4.5{\%} for strained-Si and control Si devices, respectively, with the channel length of 0.6 μm. Beside the strain caused by lattice mismatch, the mechanical strain can further enhance the current drive of the strained-Si NMOSFET. The strain distribution due to the mechanical stress has different effect on the current enhancement depending on the strain magnitude and channel direction. The smaller current enhancement for strained-Si device as compared to the control device can be explained by the saturation of mobility enhancement at large strain.",
keywords = "Drain-current enhancement, Mechanical strain, Strained-Si nMOSFET",
author = "S. Maikap and Yu, {C. Y.} and Jan, {S. R.} and Lee, {M. H.} and Liu, {C. W.}",
year = "2004",
month = "1",
day = "1",
doi = "10.1109/LED.2003.821671",
language = "English",
volume = "25",
pages = "40--42",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

TY - JOUR

T1 - Mechanically Strained Strained-Si NMOSFETs

AU - Maikap, S.

AU - Yu, C. Y.

AU - Jan, S. R.

AU - Lee, M. H.

AU - Liu, C. W.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - The drain-current enhancement of the mechanically strained strained-Si NMOSFET device is investigated for the first time. The improvements of the drain current are found to be ∼3.4% and ∼6.5% for the strained-Si and control Si devices, respectively, with the channel length of 25 μm at the external biaxial tensile strain of 0.037%, while the drain-current enhancements are ∼2.0% and ∼4.5% for strained-Si and control Si devices, respectively, with the channel length of 0.6 μm. Beside the strain caused by lattice mismatch, the mechanical strain can further enhance the current drive of the strained-Si NMOSFET. The strain distribution due to the mechanical stress has different effect on the current enhancement depending on the strain magnitude and channel direction. The smaller current enhancement for strained-Si device as compared to the control device can be explained by the saturation of mobility enhancement at large strain.

AB - The drain-current enhancement of the mechanically strained strained-Si NMOSFET device is investigated for the first time. The improvements of the drain current are found to be ∼3.4% and ∼6.5% for the strained-Si and control Si devices, respectively, with the channel length of 25 μm at the external biaxial tensile strain of 0.037%, while the drain-current enhancements are ∼2.0% and ∼4.5% for strained-Si and control Si devices, respectively, with the channel length of 0.6 μm. Beside the strain caused by lattice mismatch, the mechanical strain can further enhance the current drive of the strained-Si NMOSFET. The strain distribution due to the mechanical stress has different effect on the current enhancement depending on the strain magnitude and channel direction. The smaller current enhancement for strained-Si device as compared to the control device can be explained by the saturation of mobility enhancement at large strain.

KW - Drain-current enhancement

KW - Mechanical strain

KW - Strained-Si nMOSFET

UR - http://www.scopus.com/inward/record.url?scp=0347337810&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347337810&partnerID=8YFLogxK

U2 - 10.1109/LED.2003.821671

DO - 10.1109/LED.2003.821671

M3 - Article

AN - SCOPUS:0347337810

VL - 25

SP - 40

EP - 42

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 1

ER -