Mechanical property effects of Si1 - XGex channel and stressed contact etching stop layer on nano-scaled n-type metal-oxide- semiconductor field effect transistors

Chang Chun Lee, Hsien Chie Cheng, Hung Wen Hsu, Zih Han Chen, Hsiao Hsuan Teng, Chuan-Hsi Liu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This study demonstrated that advanced strained engineering in contact etching stop layer (CESL) combined with silicon germanium (Si 1 - xGex) stressors can be efficiently utilized to enhance the performance of devices. Lattice mismatch stress was induced to establish an Si1 - xGex channel integrated with intrinsic stress of CESL, which consists of multiple stressors, to analyze the stress contour of the concerned channel in n-type metal-oxide-semiconductor field effect transistors (nMOSFETs) by three-dimensional (3D) finite element analysis (FEA). The types of intrinsic CESL stress considered in this study were tensile (1.1 GPa) (t-CESL) and compressive (- 2.0 GPa) (c-CESL). Germanium mole fractions, including 0%, 22.5%, and 25%, utilized in the Si1 - xGex channel were selected to carefully analyze their impact on the Si1 - xGe x channel. The effect of channel geometries, which are composed of aspect ratio of length and width, was considered as well. Results reveal that the stress components of the Si1 - xGex channel increases significantly when the amount of Si1 - xGex layer increases. A change in the length and width of the channel induces inversion in the Si1 - xGex channel regarding stress conventions in the direction of the channel's length and width. Results predicted by the proposed FEA were consistent with experimental data as validated by the nMOSFET with an Si0.775Ge0.225 channel. Comparison of the simulation results of FEA with two-dimensional (2D) and 3D models was performed. The results show that wide gate width in the 3D model can induce a response to the calculated results similar to that obtained in a 2D situation.

Original languageEnglish
Pages (from-to)316-322
Number of pages7
JournalThin Solid Films
Volume557
DOIs
Publication statusPublished - 2014 Apr 30

Fingerprint

n-type semiconductors
MOSFET devices
metal oxide semiconductors
Etching
field effect transistors
etching
mechanical properties
Mechanical properties
Germanium
Finite element method
Lattice mismatch
Silicon
germanium
Aspect ratio
Geometry
aspect ratio
engineering
inversions

Keywords

  • CESL
  • Finite element analysis (FEA)
  • SiGe channel

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Mechanical property effects of Si1 - XGex channel and stressed contact etching stop layer on nano-scaled n-type metal-oxide- semiconductor field effect transistors. / Lee, Chang Chun; Cheng, Hsien Chie; Hsu, Hung Wen; Chen, Zih Han; Teng, Hsiao Hsuan; Liu, Chuan-Hsi.

In: Thin Solid Films, Vol. 557, 30.04.2014, p. 316-322.

Research output: Contribution to journalArticle

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title = "Mechanical property effects of Si1 - XGex channel and stressed contact etching stop layer on nano-scaled n-type metal-oxide- semiconductor field effect transistors",
abstract = "This study demonstrated that advanced strained engineering in contact etching stop layer (CESL) combined with silicon germanium (Si 1 - xGex) stressors can be efficiently utilized to enhance the performance of devices. Lattice mismatch stress was induced to establish an Si1 - xGex channel integrated with intrinsic stress of CESL, which consists of multiple stressors, to analyze the stress contour of the concerned channel in n-type metal-oxide-semiconductor field effect transistors (nMOSFETs) by three-dimensional (3D) finite element analysis (FEA). The types of intrinsic CESL stress considered in this study were tensile (1.1 GPa) (t-CESL) and compressive (- 2.0 GPa) (c-CESL). Germanium mole fractions, including 0{\%}, 22.5{\%}, and 25{\%}, utilized in the Si1 - xGex channel were selected to carefully analyze their impact on the Si1 - xGe x channel. The effect of channel geometries, which are composed of aspect ratio of length and width, was considered as well. Results reveal that the stress components of the Si1 - xGex channel increases significantly when the amount of Si1 - xGex layer increases. A change in the length and width of the channel induces inversion in the Si1 - xGex channel regarding stress conventions in the direction of the channel's length and width. Results predicted by the proposed FEA were consistent with experimental data as validated by the nMOSFET with an Si0.775Ge0.225 channel. Comparison of the simulation results of FEA with two-dimensional (2D) and 3D models was performed. The results show that wide gate width in the 3D model can induce a response to the calculated results similar to that obtained in a 2D situation.",
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N2 - This study demonstrated that advanced strained engineering in contact etching stop layer (CESL) combined with silicon germanium (Si 1 - xGex) stressors can be efficiently utilized to enhance the performance of devices. Lattice mismatch stress was induced to establish an Si1 - xGex channel integrated with intrinsic stress of CESL, which consists of multiple stressors, to analyze the stress contour of the concerned channel in n-type metal-oxide-semiconductor field effect transistors (nMOSFETs) by three-dimensional (3D) finite element analysis (FEA). The types of intrinsic CESL stress considered in this study were tensile (1.1 GPa) (t-CESL) and compressive (- 2.0 GPa) (c-CESL). Germanium mole fractions, including 0%, 22.5%, and 25%, utilized in the Si1 - xGex channel were selected to carefully analyze their impact on the Si1 - xGe x channel. The effect of channel geometries, which are composed of aspect ratio of length and width, was considered as well. Results reveal that the stress components of the Si1 - xGex channel increases significantly when the amount of Si1 - xGex layer increases. A change in the length and width of the channel induces inversion in the Si1 - xGex channel regarding stress conventions in the direction of the channel's length and width. Results predicted by the proposed FEA were consistent with experimental data as validated by the nMOSFET with an Si0.775Ge0.225 channel. Comparison of the simulation results of FEA with two-dimensional (2D) and 3D models was performed. The results show that wide gate width in the 3D model can induce a response to the calculated results similar to that obtained in a 2D situation.

AB - This study demonstrated that advanced strained engineering in contact etching stop layer (CESL) combined with silicon germanium (Si 1 - xGex) stressors can be efficiently utilized to enhance the performance of devices. Lattice mismatch stress was induced to establish an Si1 - xGex channel integrated with intrinsic stress of CESL, which consists of multiple stressors, to analyze the stress contour of the concerned channel in n-type metal-oxide-semiconductor field effect transistors (nMOSFETs) by three-dimensional (3D) finite element analysis (FEA). The types of intrinsic CESL stress considered in this study were tensile (1.1 GPa) (t-CESL) and compressive (- 2.0 GPa) (c-CESL). Germanium mole fractions, including 0%, 22.5%, and 25%, utilized in the Si1 - xGex channel were selected to carefully analyze their impact on the Si1 - xGe x channel. The effect of channel geometries, which are composed of aspect ratio of length and width, was considered as well. Results reveal that the stress components of the Si1 - xGex channel increases significantly when the amount of Si1 - xGex layer increases. A change in the length and width of the channel induces inversion in the Si1 - xGex channel regarding stress conventions in the direction of the channel's length and width. Results predicted by the proposed FEA were consistent with experimental data as validated by the nMOSFET with an Si0.775Ge0.225 channel. Comparison of the simulation results of FEA with two-dimensional (2D) and 3D models was performed. The results show that wide gate width in the 3D model can induce a response to the calculated results similar to that obtained in a 2D situation.

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